Datasheet > 6MBP20XSD060-50

6MBP20XSD060-50

更新时间： 2024-04-09 18:59:41

品牌	Logo	应用领域
富士电机 - FUJI		栅
页数	文件大小	规格书
17页	1812K
描述
IPM(Inv.+Gate Driver) P633A

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6MBP20XSD060-50 数据手册

6MBP20XSD060-50

IGBT Modules

Electrical characteristics

■

● Control circuit block (continued)

Description

Over current protection

voltage level

Symbol

V _IS(ref)

Conditions

min.

Unit

max

typ.

V _CC=15V

0.455

0.480

0.505

Note*3,11

See Fig.2-2

t _d(IS)

0.3

0.8

1.3

Over current protection delay time

Output voltage of

s

T _vj(LVIC)=90℃

T _vj(LVIC)=25℃

2.63

0.88

2.77

1.13

2.91

1.39

V _(temp)

Notr*12

temperature sensor

V _CCunder voltage trip level of

low-side

V _CCL(OFF)

10.3

12.5

V _CCunder voltage reset level of

T _vj<150℃

V _CCL(ON)

V _CCL(hys)

V _CCH(OFF)

10.8

0.5

13.0

low-side

See Fig.2-3

V _CCunder voltage hysteresis

V _CCunder voltage trip level of

high-side

8.3

10.3

V _CCunder voltage reset level of

high-side

T _vj<150℃

V _CCH(ON)

8.8

10.8

See Fig.2-4

10.0

10.5

0.5

12.0

12.5

V _CCunder voltage hysteresis

V _Bunder voltage trip level

V _Bunder voltage reset level

V _Bunder voltage hysteresis

V _CCH(hys)

V _B(OFF)

V _B(ON)

T _vj<150℃

See Fig.2-5

0.5

1.4

4.3

V _B(hys)

0.9

2.3

1.9

6.3

V _F(BSD)

T _vj=25℃ I _F(BSD)=10mA

T _vj=25℃ I _F(BSD)=100mA

Forward voltage of bootstrap diode

1695g

2022/05

1 2 3 456 7 8...17

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