6MBI100XWE120-50
IGBT Modules
■ Electrical characteristics (at T vj= 25°C unless otherwise specified)
Characteristics
Items
Symbols
Conditions
Units
min.
typ.
7.45
max.
T vj= 25°C
T vj=125°C
T vj=150°C
T vj=175°C
T vj= 25°C
T vj=125°C
T vj=150°C
V CC = 600V
IC, IF = 100A
-
-
-
-
-
-
-
-
-
-
-
-
-
10.51
11.50
12.79
7.07
E on
Turn-on energy
V GE = +15/-15 V
R G
L S
=
5.1 Ω
=
30 nH
8.82
E off
Turn-off energy
mJ
-
9.55
9.93
3.00
4.88
5.88
6.51
5000
495
T vj=175°C
T vj= 25°C
T vj=125°C
T vj=150°C
T vj=175°C
-
-
-
-
-
-
-
-
-
Reverse recovery
energy
E rr
-
-
-
T =
T =
25°C
Resistance
B value
R
B
Ω
465
520
100°C
3305
3375
3450
K
T =
25 / 50°C
NOTICE:
The external gate resistance (R G) shown above is one of our recommended value for the purpose of
minimum switching loss. However the optimum R G depends on circuit configuration and/or environment.
We recommend that the R G has to be carefully chosen based on consideration if IGBT module
matches design criteria, for example, switching loss, EMC/EMI, spike voltage, surge current and
no unexpected oscillation and so on.
■Thermal resistance characteristics
Characteristics
Items
Symbols
Conditions
Units
min.
typ.
max.
-
-
0.22
Thermal resistance
junction to case
(1 device)
Inverter IGBT
Inverter FWD
R th(j-c)
-
-
-
0.31
-
K / W
Thermal resistance case to
heatsink (1 IGBT + 1 FWD)
(*1)
R th(c-s)
with 1 W / (m·K) thermal grease
0.05
(*1) This is the value which is defined mounting on the additional heatsink with thermal grease.
FM5F9601a
2022/05
4