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6EDL04 PDF预览

6EDL04

更新时间: 2022-05-14 22:18:40
品牌 Logo 应用领域
英飞凌 - INFINEON /
页数 文件大小 规格书
22页 853K
描述
200 V and 600 V three-phase gate driver with Over Current Protection (OCP), Enable (EN), Fault and Integrated Bootstrap Diode (BSD)

6EDL04 数据手册

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6EDL04 family  
6EDL04x06xT and 6EDL04N02PR family  
200 V and 600 V three-phase gate driver with Over Current Protection (OCP),  
Enable (EN), Fault and Integrated Bootstrap Diode (BSD)  
Features  
Product summary  
Infineon thin-film-SOI-technology  
Maximum blocking voltage +600 V  
Output source/sink current +0.165 A/-0.375 A  
Integrated ultra-fast, low RDS(ON) Bootstrap Diode  
Insensitivity of the bridge output to negative  
transient voltages up to -50 V given by SOI-  
technology  
VOFFSET (6EDL04x06xT)  
= 620 V max.  
VOFFSET (6EDL04N02PR) = 200 V max.  
IO+/- (typ.)  
ton / toff (6EDL04Ixxxx)  
= +0.165 A / -0.375 A  
= 530ns / 490 ns  
ton / toff (6EDL04Nxxxx) = 530ns / 530 ns  
tf/tr (typ. CL=1 nF)  
= 60 ns / 26 ns  
Separate control circuits for all six drivers  
Detection of over current and under voltage supply  
Externally programmable delay for fault clear after  
over current detection  
Package  
DSO-28  
'Shut down' of all switches during error conditions  
CMOS and LSTTL compatible input (negative logic)  
Signal interlocking of every phase to prevent cross-  
conduction  
TSSOP-28  
Potential applications  
Home appliance, refrigeration compressors, air-conditioning  
Fans, pumps  
Motor drives, general purpose inverters  
Power tools, light electric vehicles  
Product validation  
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.  
Description  
The device 6ED family – 2nd generation is a full bridge driver to control power devices like MOS-transistors or  
IGBTs in 3-phase systems with a maximum blocking voltage of +600 V. Based on the used SOI-technology there  
is an excellent ruggedness on transient voltages. No parasitic thyristor structures are present in the device.  
Hence, no parasitic latch-up may occur at all temperatures and voltage conditions.  
The six independent drivers are controlled at the low-side using CMOS resp. LSTTL compatible signals, down to  
3.3 V logic. The device includes an under-voltage detection unit with hysteresis characteristic and an over-  
current detection. The over-current level is adjusted by choosing the resistor value and the threshold level at  
pin ITRIP. Both error conditions (under-voltage and over-current) lead to a definite shut down off all six  
switches. An error signal is provided at the FAULT open drain output pin. The blocking time after over-current  
can be adjusted with an RC-network at pin RCIN. The input RCIN owns an internal current source of 2.8 µA.  
Therefore, the resistor RRCIN is optional. The typical output current can be given with 165 mA for pull-up and  
375 mA for pull down. Because of system safety reasons a 310 ns interlocking time has been realised. The  
function of input EN can optionally be extended with over-temperature detection, using an external NTC-  
resistor (see Figure 1). The monolithic integrated bootstrap diode structures between pins VCC and VBx can be  
used for power supply of the high side.  
6EDL04 family Datasheet  
www.infineon.com/gdThreePhase  
Please read the Important Notice and Warnings at the end of this document  
1 of 22  
Version 2.7  
2019-03-21  
 
 
 
 
 
 

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