Datasheet > 62LV256

62LV256

更新时间： 2024-09-30 22:19:31

品牌	Logo	应用领域
美国芯成 - ISSI		/
页数	文件大小	规格书
9页	42K
描述
32K x 8 LOW VOLTAGE STATIC RAM

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62LV256 数据手册

IS62LV256

ISSI

32K x 8 LOW VOLTAGE STATIC RAM

DECEMBER 2002

FEATURES

DESCRIPTION

The ISSI IS62LV256 is a very high-speed, low power,

32,768-word by 8-bit static RAM. It is fabricated using ISSI's

high-performance CMOS double-metal technology.

• Access time: 45, 70 ns

• Low active power: 70 mW

• Low standby power

When CE is HIGH (deselected), the device assumes a

standby mode at which the power dissipation is reduced to

10 µW (typical) with CMOS input levels.

— 45 µW CMOS standby

• Fully static operation: no clock or refresh

required

• TTL compatible inputs and outputs

• Single 3.3V power supply

Easy memory expansion is provided by using an active LOW

Chip Enable (CE) input and an active LOW Output Enable

(OE) input. The active LOW Write Enable (WE) controls both

writing and reading of the memory.

The IS62LV256 is pin compatible with other 32K x 8 SRAMs

in300-milSOJ,330-milplasticSOP,andTSOP(TypeINormal

and Reverse Bent) packages.

FUNCTIONAL BLOCK DIAGRAM

256 X 1024

MEMORY ARRAY

A0-A14

DECODER

VCC

GND

I/O

I/O0-I/O7

DATA

CIRCUIT

COLUMN I/O

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. K

12/11/02

12 3 4 5 6 7...9

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