Datasheet > 6116LA45TPGI

6116LA45TPGI

更新时间： 2024-01-07 06:14:23

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器光电二极管
页数	文件大小	规格书
11页	611K
描述
Standard SRAM, 2KX8, 45ns, CMOS, PDIP24, 0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-24

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6116LA45TPGI 数据手册

IDT6116SA/LA

CMOS Static RAM 2K (16K x 8-Bit)

Military, Commercial, and Industrial Temperature Ranges

DCElectricalCharacteristics⁽¹⁾(continued)

(VCC = 5.0V ± 10%, VLC = 0.2V, VHC = VCC - 0.2V)

6116SA45

6116LA45

6116SA55

6116LA55

6116SA70

6116LA70

6116SA90

6116LA90

6116SA120

6116LA120

6116SA150

6116LA150

Com'l

& Ind

Symbol

Parameter

Power

Mil

Mil Only

Unit

CC1

Operating Power Supply

100

Current, CS < VIL

Outputs Open

CC = Max., f

100

= 0

ICC2

Dynamic Operating

Current, CS < VIL

Outputs Open

CC = Max., f = fMAX

(2)

ISB

Standby Power Supply

Current (TTL Level)

CS > VIH, Outputs Open

(2)

CC = Max., f = fMAX

ISB1

Full Standby Power

Supply Current (CMOS

Level), CS > VHC

CC = Max., VIN < VLC

or VIN > VHC, f = 0

0.1

0.9

3089 tbl 09

NOTES:

1. All values are maximum guaranteed values.

2. fMAX = 1/tRC, only address inputs are toggling at fMAX, f = 0 means address inputs are not changing.

Data Retention Characteristics Over All Temperature Ranges

(LA Version Only) (VLC = 0.2V, VHC = VCC – 0.2V)

Typ.⁽¹⁾

Max.

VCC @

Symbol

Parameter

Test Condition

Min.

2.0V

3.0V

2.0V

3.0V

Unit

____

CC for Data Retention

2.0

____

Data Retention Current

MIL.

COM'L.

0.5

1.5

200

300

µA

ICCDR

(3)

CDR

____

CS > VHC

IN > VHC or < VLC

Chip Deselect to Data

Retention Time

____

(3)

(2)

Operation Recovery Time

Input Leakage Current

____

µA

IILII

3089 tbl 10

NOTES:

1. TA = + 25°C

2. tRC = Read Cycle Time.

3. This parameter is guaranteed by device characterization, but is not production tested.

1 2 345 6 7...11

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