Datasheet > 6116LA45TPGI

6116LA45TPGI

更新时间： 2024-01-22 08:36:20

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器光电二极管
页数	文件大小	规格书
11页	611K
描述
Standard SRAM, 2KX8, 45ns, CMOS, PDIP24, 0.300 INCH, ROHS COMPLIANT, PLASTIC, DIP-24

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6116LA45TPGI 数据手册

IDT6116SA/LA

CMOS Static RAM 2K (16K x 8-Bit)

Military, Commercial, and Industrial Temperature Ranges

PinConfigurations

Capacitance (TA = +25°C, f = 1.0 MHZ)

Symbol

Parameter⁽¹⁾

Input Capacitance

I/O Capacitance

Conditions

IN = 0V

OUT = 0V

Max.

Unit

CIN

A₁₀

CI/O

P24-2

P24-1

D24-2

D24-1

SO24-2

SO24-4

3089 tbl 03

NOTE:

1. This parameter is determined by device characterization, but is not production

tested.

I/O

I/O₄

GND

I/O

AbsoluteMaximumRatings⁽¹⁾

3089 drw 02

Symbol

Rating

Com'l.

Mil.

Unit

DIP/SOIC/SOJ

Top View

(2)

TERM

Terminal Voltage

with Respect

to GND

-0.5 to +7.0

Operating

Temperature

0 to +70

-55 to +125

-65 to +135

^oC

PinDescription

Temperature

Under Bias

-55 to +125

TBIAS

Name

Description

- A10

Address Inputs

Data Input/Output

Chip Select

Write Enable

Output Enable

Power

STG

Storage Temperature

Power Dissipation

DC Output Current

-55 to +125

-65 to +150

^oC

I/O

- I/O

1.0

IOUT

3089 tbl 04

NOTES:

1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS

may cause permanent damage to the device. This is a stress rating only and

functional operation of the device at these or any other conditions above those

indicated in the operational sections of this specification is not implied. Exposure

to absolute maximum rating conditions for extended periods may affect

reliability.

GND

Ground

3089 tbl 01

2. VTERM must not exceed VCC +0.5V.

TruthTable⁽¹⁾

Mode

Standby

Read

I/O

High-Z

DATA^OUT

High-Z

Read

Write

DATA^IN

3089 tbl 02

NOTE:

1. H = VIH, L = VIL, X = Don't Care.

123 4 5 6 7...11

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