Datasheet > 60NM60

60NM60

更新时间： 2023-12-06 20:07:31

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60NM60 数据手册

60NM60

Power MOSFET



ABSOLUTE MAXIMUM RATINGS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

600

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Continuous

Drain Current

Pulsed (Note 2)

I_DM

180

Avalanche Current (Note 2)

Avalanche Energy

I_AR

Single Pulsed (Note 3)

TO-247

E_AS

1800

320

°C

Power Dissipation

P_D

TO-3P

357

Junction Temperature

Storage Temperature

T_J

+150

-55 ~ +150

T_STG

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature.

3. L = 36mH, I_AS= 10A, V_DD= 50V, R_G= 25ꢀ, Starting T_J= 25°C



THERMAL DATA

PARAMETER

TO-247

SYMBOL

RATINGS

UNIT

°С/W

Junction to Ambient

Junction to Case

θ_JA

TO-3P

TO-247

TO-3P

0.39

0.35

θ_jC



ELECTRICAL CHARACTERISTICS (T_C=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

I_D=250µA, V_GS=0V

V_DS=600V, V_GS=0V

V_GS=+30V, V_DS=0V

V_GS=-30V, V_DS=0V

600

µA

Forward

Reverse

+100 nA

Gate- Source Leakage Current

I_GSS

-100

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D=250µA

V_GS=10V, I_D=30A

2.5

4.5

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

mꢀ

C_ISS

C_OSS

C_RSS

4900

2730

128

V_GS=0V, V_DS=25V, f=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

156

V_DS=200V, V_GS=10V,

Gate to Source Charge

Gate to Drain Charge

Turn-ON Delay Time

Rise Time

I_D=60A , (Note 1, 2)

150

500

1400

823

V_DD=30V, V_GS=10V, I_D=0.5A,

R_G=25ꢀ (Note 1, 2)

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

I_S

I_SM

V_SD

t_rr

180

1.4

I_S=60A, V_GS=0V

I_S=30A, V_GS=0V, V_R=200V

dI_F/dt=100A/µs (Note 1)

640

µC

Q_rr

Notes: 1. Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%.

2. Essentially independent of operating ambient temperature.

UNISONIC TECHNOLOGIES CO., LTD

2 of 7

QW-R205-320.C

www.unisonic.com.tw

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