5V41234
1 OUTPUT PCIE GEN1/2/3 SYNTHESIZER
AC Electrical Characteristics - CLK/CLK
Unless stated otherwise, VDD=3.3V ±±%, Ambient Temperature -40 to +85C
Parameter
Input Frequency
Symbol
Conditions
Min.
Typ.
25
Max.
Units
MHz
MHz
mV
mV
mV
mV
ps
Output Frequency
100
700
0
1,2
Output High Voltage
V
660
-150
250
850
27
OH
1,2
Output Low Voltage
V
OL
1,2
Crossing Point Voltage
Crossing Point Voltage
Absolute
350
40
550
140
100
700
700
125
55
1,2,4
Variation over all edges
1,3
Jitter, Cycle-to-Cycle
25
1,2
Rise Time
t
From 0.175V to 0.525V
From 0.525V to 0.175V
175
175
332
344
75
ps
OR
1,2
Fall Time
t
ps
OF
1,2
Rise/Fall Time Variation
ps
1,3
Duty Cycle
45
51
%
Stabilization Time
t
From power-up VDD = 3.3V
1.2
3.0
3.0
ms
STABLE
Spread Change Time
t
Settling period after spread change
ms
SPREAD
1
2
3
4
Test setup is R =33 ohms R =50 ohms with 2pF, R = 475 (1%).
S
P
R
Measurement taken from a single-ended waveform.
Measurement taken from a differential waveform.
Measured at the crossing point where instantaneous voltages of both CLK and CLK are equal.
Electrical Characteristics - Differential Phase Jitter
TA = Commercial and Industrial, Supply Voltage VDD = 3.3 V +/-5%
SPEC
PARAMETER
Symbol
tjphaseG1
Conditions
PCIe Gen 1
Min
Typ
28
Max
86
Units Notes
ps (p-p) 1,2,3
PCIe Gen 2
10kHz < f < 1.5MHz
PCIe Gen 2
ps
tjphaseG2Lo
tjphaseG2High
tjphaseG3
1.1
1.8
3
3.1
1
1,2,3
(RMS)
Jitter, Phase
ps
(RMS)
1,2,3
1.5MHz < f < Nyquist (50MHz)
ps
PCIe Gen 3
0.48
1,2,3
(RMS)
1Guaranteed by design and characterization, not 100% tested in production.
2See http://www.pcisig.com for complete specs
3Applies to 100MHz, spread off and 0.5% down spread only.
Thermal Characteristics
Parameter
Symbol
Conditions
Min.
Typ. Max. Units
Thermal Resistance Junction to
Ambient
Still air
69.4
60.7
54.4
9.7
C/W
C/W
C/W
C/W
JA
JA
JA
JC
1 m/s air flow
2.5 m/s air flow
Thermal Resistance Junction to Case
IDT® 1 OUTPUT PCIE GEN1/2/3 SYNTHESIZER
8
5V41234
MAY 5, 2017