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5STP45Q2800 PDF预览

5STP45Q2800

更新时间: 2024-01-06 16:36:21
品牌 Logo 应用领域
ABB 栅极
页数 文件大小 规格书
6页 227K
描述
Phase Control Thyristor

5STP45Q2800 技术参数

生命周期:Active包装说明:DISK BUTTON, O-XXDB-X2
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.75Is Samacsys:N
配置:SINGLE关态电压最小值的临界上升速率:1000 V/us
最大直流栅极触发电流:400 mA最大直流栅极触发电压:2.6 V
最大维持电流:100 mAJESD-30 代码:O-XXDB-X2
通态非重复峰值电流:75000 A元件数量:1
端子数量:2最大通态电流:5490000 A
最高工作温度:125 °C封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:8625 A
断态重复峰值电压:2800 V重复峰值反向电压:2800 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
触发设备类型:SCRBase Number Matches:1

5STP45Q2800 数据手册

 浏览型号5STP45Q2800的Datasheet PDF文件第1页浏览型号5STP45Q2800的Datasheet PDF文件第3页浏览型号5STP45Q2800的Datasheet PDF文件第4页浏览型号5STP45Q2800的Datasheet PDF文件第5页浏览型号5STP45Q2800的Datasheet PDF文件第6页 
5STP 45Q2800  
On-state  
ITAVM  
ITRMS  
ITSM  
Max. average on-state current  
5490 A  
8625 A  
Half sine wave, TC = 70°C  
Max. RMS on-state current  
Max. peak non-repetitive  
surge current  
75000 A  
79000 A  
28125 kA2s  
25900 kA2s  
1.29 V  
tp  
tp  
tp  
tp  
IT  
=
=
=
=
=
=
10 ms  
8.3 ms  
Tj =  
125°C  
After surge:  
I2t  
Limiting load integral  
10 ms  
VD = VR = 0V  
8.3 ms  
VT  
On-state voltage  
6000 A  
VT0  
rT  
Threshold voltage  
Slope resistance  
0.86 V  
IT  
3000 - 9000 A  
Tj =  
125°C  
0.070  
mW  
IH  
Holding current  
40-100 mA  
20-75 mA  
Tj  
Tj  
Tj  
Tj  
= 25°C  
= 125°C  
= 25°C  
= 125°C  
IL  
Latching current  
100-500 mA  
150-350 mA  
Switching  
di/dtcrit  
Critical rate of rise of on-state  
250 A/µs Cont.  
Tj = 125°C  
VD £ 0.67×VDRM  
current  
500 A/µs 60 sec.  
ITRM  
=
=
=
=
>
3000 A f = 50 Hz  
2.0 A tr = 0.5 µs  
2.0 A tr = 0.5 µs  
3000 A Tj = 125°C  
200 V  
IFG  
td  
tq  
Delay time  
3.0 µs  
IFG  
£
£
VD = 0.4×VDRM  
VD £ 0.67×VDRM  
Turn-off time  
400 µs  
ITRM  
dvD/dt = 20V/µs VR  
Qrr  
Recovery charge  
min  
4200 µAs  
6500 µAs  
diT/dt =  
-5 A/µs  
max  
Triggering  
VGT  
Gate trigger voltage  
2.6 V  
Tj = 25°C  
IGT  
Gate trigger current  
400 mA Tj = 25°C  
VGD  
IGD  
Gate non-trigger voltage  
Gate non-trigger current  
Peak forward gate voltage  
Peak forward gate current  
Peak reverse gate voltage  
Maximum gate power loss  
0.3 V  
10 mA  
12 V  
10 A  
10 V  
3 W  
VD  
VD  
=
=
0.4×VDRM  
0.4×VDRM  
VFGM  
IFGM  
VRGM  
PG  
ABB Semiconductors AG reserves the right to change specifications without notice.  
Doc. No. 5SYA1050-01 Sep.00  
2 of 6  

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