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5SGA40L4501 PDF预览

5SGA40L4501

更新时间: 2024-02-27 08:45:26
品牌 Logo 应用领域
ABB
页数 文件大小 规格书
9页 244K
描述
Asymmetric Gate turn-off Thyristor

5SGA40L4501 技术参数

生命周期:Active包装说明:DISK BUTTON, O-CXDB-X4
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.75Is Samacsys:N
配置:SINGLEJESD-30 代码:O-CXDB-X4
通态非重复峰值电流:26 A元件数量:1
端子数量:4最大通态电流:1100000 A
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大均方根通态电流:1570 A断态重复峰值电压:4500 V
重复峰值反向电压:17 V子类别:Silicon Controlled Rectifiers
表面贴装:YES端子形式:UNSPECIFIED
端子位置:UNSPECIFIED触发设备类型:GATE TURN-OFF SCR
Base Number Matches:1

5SGA40L4501 数据手册

 浏览型号5SGA40L4501的Datasheet PDF文件第3页浏览型号5SGA40L4501的Datasheet PDF文件第4页浏览型号5SGA40L4501的Datasheet PDF文件第5页浏览型号5SGA40L4501的Datasheet PDF文件第7页浏览型号5SGA40L4501的Datasheet PDF文件第8页浏览型号5SGA40L4501的Datasheet PDF文件第9页 
5SGA 40L4501  
Fig. 9 Turn-on energy per pulse vs. on-state current  
Fig. 10 Turn-on energy per pulse vs. on-state current  
and turn-on voltage  
and current rise rate  
Common Test conditions:  
diG/dt  
CS  
= 40 A/µs  
= 6 µF  
RS  
= 5 W  
Tj  
= 125 °C  
Definition of Turn-on energy:  
20ms  
Eon =  
VD ×ITdt (t = 0, IG = 0.1×IGM )  
ò
0
Definition of Turn-off energy:  
40ms  
E
off  
=
V
D
× I  
T
dt ( t = 0, I = 0.9 × ITGQ )  
T
ò
0
Fig. 11 Turn-on energy per pulse vs. on-state current  
and turn-on voltage  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  
Doc. No. 5SYA1208-02 March 05  
page 6 of 9  

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