Datasheet > 5P45AS-SMA-TO277

5P45AS-SMA-TO277

更新时间： 2022-02-26 12:36:06

品牌	Logo	应用领域
佑风微 - YFW		/
页数	文件大小	规格书
3页	1137K
描述
Trench MOS Barrier Schottky Rectifier

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数据手册

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5P45AS-SMA-TO277 数据手册

5P45AS

5P45SB

5P45SP

Trench MOS Barrier Schottky Rectifier

Features

• Advanced trench technology

• Low forward voltage drop

SMAꢀ

SMB-FL

TO-277

• Low power losses

• High efficiency operation

• Lead Free Finish, RoHS Compliant

5P45AS

5P45SB

5P45SP

ꢀ

Applications

• DC/DC Converters

• AC/DC Adaptors

Cathode

Anode

Maximum ratings and electrical characteristics (TJ = 25°C unless otherwise noted)

Parameter

Symbol

VRRM

Limit

Unit

Maximum repetitive peak reverse voltage

Maximum average forward rectified current

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load per diode

Operating junction and storage temperature range

IF(AV)

IFSM

TJ, TSTG

RƟJL

150

°C

-40 to +150

SMA/SMB-FL

Typical thermal resistance per diode

(Mounted on FR-4 PCB)

°C/W

TO-277

TYP.

MAX.

VF(1)

IR(2)

IF=5A TJ=25°C

IF=5A TJ=125°C

0.49

0.41

0.52

Instantaneous forward voltage

TJ=25°C

Instantaneous reverse current per diode

at rated reverse voltage

Notes:

TJ=125°C

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width ≦ 40 ms

www.yfwdiode.com

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