Datasheet > 5N65L-TN3-R

5N65L-TN3-R

更新时间： 2022-09-22 18:14:09

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友顺 - UTC		/
页数	文件大小	规格书
6页	248K
描述
5A, 650V N-CHANNEL POWER MOSFET

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5N65L-TN3-R 数据手册

5N65

Power MOSFET

ELECTRICAL CHARACTERISTICS (T_C= 25°C unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

V_GS=0V, I_D= 250μA

650

V_DS=650V, V_GS= 0V

V_GS=30V, V_DS= 0V

μA

Forward

Reverse

100

-100

Gate-Source Leakage Current

I_GSS

V_GS=-30V, V_DS= 0V

V/°C

△BV_DSS/△T_J

Breakdown Voltage Temperature Coefficient

ON CHARACTERISTICS

Gate Threshold Voltage

Static Drain-Source On-State Resistance

DYNAMIC CHARACTERISTICS

Input Capacitance

I_D=250μA, Referenced to 25℃

0.6

V_GS(TH)

R_DS(ON)

V_DS=V_GS, I_D= 250μA

2.0

4.0

V_GS=10V, I_D= 2.5A

2.0 2.4

Ω

C_ISS

C_OSS

C_RSS

515 670 pF

55 72 pF

6.5 8.5 pF

V_DS= 25V, V_GS= 0V,

f = 1.0MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING CHARACTERISTICS

Turn-On Delay Time

t_D(ON)

t_R

t_D(OFF)

t_F

Turn-On Rise Time

V_DD= 325V, I_D=5A,

R_G= 25Ω (Note 1, 2)

Turn-Off Delay Time

Turn-Off Fall Time

46 100 ns

Total Gate Charge

Q_G

2.5

6.6

V_DS= 520 V, I_D= 5A,

Gate-Source Charge

Q_GS

V_GS= 10 V (Note 1, 2)

Gate-Drain Charge

Q_GD

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

Drain-Source Diode Forward Voltage

Maximum Continuous Drain-Source Diode

Forward Current

V_SD

V_GS= 0 V, I_S= 5A

1.4

I_S

Maximum Pulsed Drain-Source Diode

Forward Current

I_SM

Reverse Recovery Time

t_rr

300

2.2

V_GS= 0 V, I_S=5A,

d_IF/ dt = 100 A/μs (Note 1)

Reverse Recovery Charge

Q_RR

μC

Note 1. Pulse Test: Pulse width ≤ 300μs, Duty cycle ≤ 2%

2. Essentially independent of operating temperature

UNISONIC TECHNOLOGIES CO., LTD

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