Datasheet > 5LN01S_12

5LN01S_12

更新时间： 2024-01-28 09:43:50

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
7页	524K
描述
General-Purpose Switching Device Applications

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数据手册

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5LN01S_12 数据手册

5LN01S

Ordering number : EN6561B

SANYO Sem iconductors

DATA S HEET

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

5LN01S

Features

•

Low ON-resistance

•

Ultrahigh-speed switching

•

2.5V drive

Speciﬁcations

at Ta=25°C

Absolute Maximum Ratings

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

±10

0.1

DSS

GSS

Drain Current (Pulse)

PW 10 s, duty cycle 1%

0.4

≤

Allowable Power Dissipation

Channel Temperature

Storage Temperature

0.15

150

°C

Tch

Tstg

--55 to +150

This product is designed to “ESD immunity < 200V ”, so please take care when handling.

Machine Model

Package Dimensions

unit : mm (typ)

Product & Package Information

• Package

: SMCP

7027-004

• JEITA, JEDEC

: SC-75, SOT-416

•

Minimum Packing Quantity : 3,000 pcs./reel

5LN01S-TL-E

1.6

0.8

Packing Type: TL

Marking

0.4

1 : Gate

2 : Source

3 : Drain

Electrical Connection

0.1 MIN

SANYO : SMCP

http://semicon.sanyo.com/en/network

62712 TKIM/41006PE MSIM TB-00002188/81000 TS(KOTO) TA-2049

No.6561-1/7

12 3 4 5 6 7

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