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5LP01S_06

更新时间: 2024-02-02 08:36:59
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4页 38K
描述
General-Purpose Switching Device Applications

5LP01S_06 数据手册

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Ordering number : EN6666A  
SANYO Sem iconductors  
DATA S HEET  
P-Channel Silicon MOSFET  
General-Purpose Switching Device  
Applications  
5LP01S  
Features  
Low ON-resistance.  
Ultrahigh-speed switching.  
2.5V drive.  
Specifications  
Absolute Maximum Ratings at Ta=25°C  
Parameter  
Drain-to-Source Voltage  
Symbol  
Conditions  
Ratings  
Unit  
V
V
--50  
±10  
DSS  
GSS  
Gate-to-Source Voltage  
Drain Current (DC)  
V
V
I
--0.07  
--0.28  
0.15  
150  
A
D
Drain Current (Pulse)  
Allowable Power Dissipation  
Channel Temperature  
Storage Temperature  
I
PW10µs, duty cycle1%  
A
DP  
P
W
°C  
°C  
D
Tch  
Tstg  
--55 to +150  
Electrical Characteristics at Ta=25°C  
Ratings  
typ  
Parameter  
Symbol  
Conditions  
=--1mA, V =0V  
Unit  
min  
--50  
max  
Drain-to-Source Breakdown Voltage  
Zero-Gate Voltage Drain Current  
Gate-to-Source Leakage Current  
Cutoff Voltage  
V
I
V
µA  
µA  
V
(BR)DSS  
D
GS  
I
V
V
V
V
=--50V, V =0V  
GS  
--1  
DSS  
GSS  
DS  
GS  
DS  
DS  
I
=±8V, V =0V  
DS  
±10  
V (off)  
GS  
=--10V, I =--100µA  
--0.4  
70  
--1.4  
D
Forward Transfer Admittance  
yfs  
=--10V, I =--40mA  
100  
mS  
D
R
(on)1  
DS  
(on)2  
DS  
(on)3  
DS  
I
I
I
=--40mA, V =--4V  
GS  
18  
20  
23  
28  
60  
D
D
D
Static Drain-to-Source On-State Resistance  
R
R
=--20mA, V =--2.5V  
GS  
=--5mA, V =--1.5V  
GS  
30  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Turn-ON Delay Time  
Rise Time  
Ciss  
V
V
V
=--10V, f=1MHz  
=--10V, f=1MHz  
=--10V, f=1MHz  
7.4  
4.2  
1.3  
20  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
DS  
DS  
DS  
Coss  
Crss  
t (on)  
d
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
See specified Test Circuit.  
t
r
35  
Turn-OFF Delay Time  
Fall Time  
t (off)  
d
160  
150  
t
f
Marking : XB  
Continued on next page.  
Any and all SANYO Semiconductor products described or contained herein do not have specifications  
that can handle applications that require extremely high levels of reliability, such as life-support systems,  
aircraft's control systems, or other applications whose failure can be reasonably expected to result in  
serious physical and/or material damage. Consult with your SANYO Semiconductor representative  
nearest you before usingany SANYO Semiconductor products described or contained herein in such  
applications.  
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products  
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition  
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor  
products described or contained herein.  
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN  
71206 / 41006PE MS IM TB-00002192 / D2000 TS IM TA-3075 No.6666-1/4  

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