Datasheet > 5LP01M_06

5LP01M_06

更新时间： 2024-09-29 07:53:11

品牌	Logo	应用领域
三洋 - SANYO		开关通用开关
页数	文件大小	规格书
4页	73K
描述
General-Purpose Switching Device Applications

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中文翻译

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数据手册

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5LP01M_06 数据手册

Ordering number : EN6135A

5LP01M

SANYO Sem iconductors

DATA S HEET

P-Channel Silicon MOSFET

5LP01M

General-Purpose Switching Device

Applications

Features

•

Low ON-resistance.

•

Ultrahigh-speed switching.

•

2.5V drive.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Symbol

Conditions

Ratings

Unit

--50

±10

DSS

GSS

--0.07

--0.28

0.15

150

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

PW≤10µs, duty cycle≤1%

°C

Tch

Tstg

--55 to +150

Electrical Characteristics at Ta=25°C

Ratings

typ

Parameter

Symbol

Conditions

=--1mA, V =0V

Unit

min

--50

max

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

µA

(BR)DSS

=--50V, V =0V

--1

±10

--1.4

DSS

GSS

=±8V, V =0V

V (off)

=--10V, I =--100µA

--0.4

Forward Transfer Admittance

yfs

=--10V, I =--40mA

100

Ω

(on)1

(on)2

(on)3

=--40mA, V =--4V

Static Drain-to-Source On-State Resistance

=--20mA, V =--2.5V

Ω

=--5mA, V =--1.5V

Ω

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Marking : XB

Ciss

=--10V, f=1MHz

7.4

4.2

1.3

Coss

Crss

Continued on next page.

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

http://semicon.sanyo.com/en/network

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

71206 / 42006PE MS IM TB-00002113 / 31000 TS (KOTO) TA-2040 No.6135-1/4

12 3 4

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与5LP01M_06相关器件

型号	品牌	获取价格	描述	数据表
5LP01M_12	SANYO	获取价格	General-Purpose Switching Device Applications
5LP01M-TL-E	SANYO	获取价格	General-Purpose Switching Device Applications
5LP01M-TL-E	ONSEMI	获取价格	Small Signal MOSFET -50V -0.07A 23 Ohm Single P-Channel MCP3, SC-70 / MCP3, 3000-REEL
5LP01M-TL-H	SANYO	获取价格	General-Purpose Switching Device Applications
5LP01M-TL-H	ONSEMI	获取价格	小信号 MOSFET，-50V，-0.07A，23Ω，单 P 沟道，MCP3
5LP01N	SANYO	获取价格	P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
5LP01S	SANYO	获取价格	Ultrahigh-Speed Switching Applications
5LP01S_06	SANYO	获取价格	General-Purpose Switching Device Applications
5LP01S_12	SANYO	获取价格	General-Purpose Switching Device Applications
5LP01SP	SANYO	获取价格	5LP01SP

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