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5KP90-G PDF预览

5KP90-G

更新时间: 2024-02-18 22:30:08
品牌 Logo 应用领域
上华 - COMCHIP /
页数 文件大小 规格书
5页 97K
描述
5000W Transient Voltage Suppressor

5KP90-G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-XALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.26
其他特性:UL RECOGNIZED最大击穿电压:122 V
最小击穿电压:100 V击穿电压标称值:111 V
外壳连接:ISOLATED最大钳位电压:160 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:TRANS VOLTAGE SUPPRESSOR DIODEJESD-30 代码:O-XALF-W2
最大非重复峰值反向功率耗散:5000 W元件数量:1
端子数量:2封装主体材料:UNSPECIFIED
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED极性:UNIDIRECTIONAL
最大功率耗散:8 W认证状态:Not Qualified
最大重复峰值反向电压:90 V子类别:Transient Suppressors
表面贴装:NO技术:AVALANCHE
端子形式:WIRE端子位置:AXIAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

5KP90-G 数据手册

 浏览型号5KP90-G的Datasheet PDF文件第2页浏览型号5KP90-G的Datasheet PDF文件第3页浏览型号5KP90-G的Datasheet PDF文件第4页浏览型号5KP90-G的Datasheet PDF文件第5页 
5000W Transient Voltage Suppressor  
5KP-G Series  
Stand-off Voltage: 6.8V ~ 220V  
Power Dissipation: 5000 Watts  
RoHS Device  
R-6  
Features  
-Glass passivated chip.  
0.052(1.32)  
0.048(1.22)  
DIA.  
-Low leakage.  
1.0(25.4)  
MIN.  
-Uni and Bidirection unit.  
-Excellent clamping capability.  
-The plastic material has UL recognition 94V-0.  
-Fast response time.  
0.360(9.14)  
0.340(8.64)  
Mechanical Data  
0.360(9.14)  
0.340(8.64)  
DIA.  
-Case: Molded plastic R-6  
-Polarity: By cathode band denotes uni-directional  
device, none cathode band denotes bi-directional  
device  
1.0(25.4)  
MIN.  
-Weight: 2.1 grams  
Dimensions in inches and (millimeter)  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60Hz, resistive or inductive loaded.  
For capacitive load, derated current by 20%.  
Symbol  
Parameter  
Value  
Unit  
Peak power dissipation with a 10/1000μs  
waveform (Note 1)  
PPP  
W
5000  
Peak pulse current with a 10/1000μs waveform  
IPP  
PD  
W
W
A
See Next Table  
(Note 1)  
Power dissipation on infinite heatsink at TL=75°C  
8.0  
Peak forward surge current, 8.3ms single  
half sine-wave unidirectional only (Note 2)  
IFSM  
500  
Maximum instantaneous forward voltage at  
100A for uni-directional devices only (Note 3)  
3.5 / 5.0  
VF  
V
Operating junction and storage temperature  
range  
OC  
TJ, TSTG  
-55 to +150  
NTOES:  
(1) Non-repetitive current pulse, per fig.5 and derated above TA=25 OC per fig. 1.  
(2) Measured on 8.3 ms single half sine wave of equivalent square wave,duty cycle=4 pulses per minute maximum.  
(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
REV:B  
Page 1  
QW-BTV08  

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