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5KP8.0C PDF预览

5KP8.0C

更新时间: 2024-02-13 15:15:32
品牌 Logo 应用领域
鲁光 - LGE 局域网二极管
页数 文件大小 规格书
4页 1224K
描述
暂无描述

5KP8.0C 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Active包装说明:O-PALF-W2
针数:2Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.50
风险等级:5.53其他特性:UL RECOGNIZED
最大击穿电压:9.83 V最小击穿电压:8.89 V
击穿电压标称值:9.9 V外壳连接:ISOLATED
最大钳位电压:15 V配置:SINGLE
二极管元件材料:SILICON二极管类型:TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码:O-PALF-W2JESD-609代码:e3
最大非重复峰值反向功率耗散:5000 W元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):260极性:BIDIRECTIONAL
最大功率耗散:8 W认证状态:Not Qualified
最大重复峰值反向电压:8 V子类别:Transient Suppressors
表面贴装:NO技术:AVALANCHE
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:40
Base Number Matches:1

5KP8.0C 数据手册

 浏览型号5KP8.0C的Datasheet PDF文件第2页浏览型号5KP8.0C的Datasheet PDF文件第3页浏览型号5KP8.0C的Datasheet PDF文件第4页 
5KP Series  
Reverse Voltage: 5.0 to 440 V  
Peak Pulse Power: 5000 W  
Axial Lead  
Transient Voltage Suppressors  
Features  
R-6/P600  
Glass passivated chip  
5000 W peak pulse power capability with a  
10/1000 μs waveform, repetitive rate (duty  
cycle):0.01 %  
DIA.  
1.000 [25.40]  
MIN  
0.052 1.32  
Low leakage  
0.048  
[ ]  
1.22  
Uni and Bidirectional unit  
Excellent clamping capability  
Very fast response time  
0.360 9.14  
0.340 8.64  
RoHS compliant  
[
]
Mechanical Data  
Case: Molded plastic  
DIA.  
0.360 9.14  
0.340 8.64  
Epoxy: UL 94V-0 rate flame retardant  
[
]
Lead: Solderable per MIL-STD-202, method  
208 guranteed  
1.000 [25.40]  
MIN  
Polarity: Color band denotes cathode end  
Dimensions :  
inch [ mm ]  
except Bipolar  
Mounting position: Any  
Maximum Ratings(TA=25unless otherwise noted)  
Value  
Unit  
W
Parameter  
Symbol  
Peak power dissipation with a 10/1000μs waveform(1)  
PPP  
IPP  
PD  
5000  
See Next Table  
8.0  
Peak pulse current wih a 10/1000μs waveform(1)  
Power dissipation on infinite heatsink at TL = 75 °C  
Peak forward surge current, 8.3 ms single half sine-wave  
A
W
IFSM  
500  
A
unidirectional only(2)  
Maximum instantaneous forward voltage at 100 A for  
unidirectional only(3)  
VF  
3.5/5.0  
V
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to +150  
°C  
Note:  
(1)Non-repetitive current pulse per Fig.5 and derated above TA= 25 °C per Fig.1  
(2)Measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses per minute maximum  
(3)VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V  
http://www.lgesemi.com  
mail:lge@lgesemi.com  
Revision:20170701-P1  

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