5KP51-G

更新时间： 2024-01-04 21:18:18

品牌	Logo	应用领域
上华 - COMCHIP		瞬态抑制器二极管
页数	文件大小	规格书
5页	97K
描述
5000W Transient Voltage Suppressor

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技术参数
数据手册

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5KP51-G 技术参数

生命周期：	Active	包装说明：	PLASTIC, P-6, 2 PIN
针数：	2	Reach Compliance Code：	compliant
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.16	其他特性：	FORMED LEAD OPTIONS ARE AVAILABLE
最大击穿电压：	69.3 V	最小击穿电压：	56.7 V
外壳连接：	ISOLATED	最大钳位电压：	91.1 V
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE	JESD-30 代码：	O-PALF-W2
最大非重复峰值反向功率耗散：	5000 W	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
极性：	UNIDIRECTIONAL	认证状态：	Not Qualified
最大反向电流：	10 µA	表面贴装：	NO
技术：	AVALANCHE	端子形式：	WIRE
端子位置：	AXIAL	Base Number Matches：	1

5KP51-G 数据手册

5000W Transient Voltage Suppressor

5KP-G Series

Stand-off Voltage: 6.8V ~ 220V

Power Dissipation: 5000 Watts

RoHS Device

R-6

Features

-Glass passivated chip.

0.052(1.32)

0.048(1.22)

DIA.

-Low leakage.

1.0(25.4)

MIN.

-Uni and Bidirection unit.

-Excellent clamping capability.

-The plastic material has UL recognition 94V-0.

-Fast response time.

0.360(9.14)

0.340(8.64)

Mechanical Data

0.360(9.14)

0.340(8.64)

DIA.

-Case: Molded plastic R-6

-Polarity: By cathode band denotes uni-directional

device, none cathode band denotes bi-directional

device

1.0(25.4)

MIN.

-Weight: 2.1 grams

Dimensions in inches and (millimeter)

Maximum Ratings and Electrical Characteristics

Rating at 25°C ambient temperature unless otherwise specified.

Single phase, half wave, 60Hz, resistive or inductive loaded.

For capacitive load, derated current by 20%.

Symbol

Parameter

Value

Unit

Peak power dissipation with a 10/1000μs

waveform (Note 1)

PPP

5000

Peak pulse current with a 10/1000μs waveform

IPP

See Next Table

(Note 1)

Power dissipation on infinite heatsink at TL=75°C

8.0

Peak forward surge current, 8.3ms single

half sine-wave unidirectional only (Note 2)

IFSM

500

Maximum instantaneous forward voltage at

100A for uni-directional devices only (Note 3)

3.5 / 5.0

Operating junction and storage temperature

range

^OC

TJ, TSTG

-55 to +150

NTOES:

(1) Non-repetitive current pulse, per fig.5 and derated above TA=25 ^OC per fig. 1.

(2) Measured on 8.3 ms single half sine wave of equivalent square wave,duty cycle=4 pulses per minute maximum.

(3) VF<3.5V for devices of VBR<200V and VF<5.0V for devices of VBR>201V

REV:B

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