Datasheet > 5962R1920601VXC

5962R1920601VXC

更新时间： 2023-09-03 20:30:53

品牌	Logo	应用领域
德州仪器 - TI		/
页数	文件大小	规格书
33页	1572K
描述
Radiation-hardness-assured (RHA), precision low-input-bias wide-supply-range amplifier with RRIO \| HBH \| 14 \| -55 to 125

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5962R1920601VXC 数据手册

LMP7704-SP

ZHCSN30C –DECEMBER 2020 –REVISED MARCH 2022

www.ti.com.cn

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)⁽¹⁾

MIN

MAX

UNIT

V_S

13.2

Supply voltage, V_S= (V+) –(V–)

Common-mode

Differential

(V+) + 0.3

(V–) –0.3

Voltage

(V+) –(V–) + 0.3

Current

±10

Continuous

150

Output short circuit⁽²⁾

Operating temperature

Junction temperature

Storage temperature

Continuous

T_A

°C

–55

T_J

150

T_STG

150

–65

(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under

Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device

reliability.

(2) Short-circuit to ground, one amplifier per package.

6.2 ESD Ratings

VALUE

±2000

±1000

UNIT

Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001⁽¹⁾

Charged-device model (CDM), per ANSI/ESDA/JEDEC JS-002⁽²⁾

V_(ESD)

Electrostatic discharge

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

MIN

2.7

NOM

MAX

UNIT

V_S

T_A

Supply voltage, V_S= (V+) –(V–)

Specified temperature

125

°C

–55

6.4 Thermal Information

LMP7704-SP

HBH (CFP)

14 PINS

37.5

THERMAL METRIC⁽¹⁾

UNIT

R_θJA

Junction-to-ambient thermal resistance

Junction-to-case(top) thermal resistance

Junction-to-board thermal resistance

ºC/W

R_θJC(top)

R_θJB

20.6

21.3

Junction-to-top characterization parameter

Junction-to-board characterization parameter

Junction-to-case(bottom) thermal resistance

12.9

ψ_JT

21.0

ψ_JB

R_θJC(bot)

10.8

(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report.

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