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5962R1322001VXC

更新时间： 2024-01-10 17:31:53
品牌 Logo 应用领域
英特矽尔 - INTERSIL /
页数 文件大小 规格书
16页 657K
描述
1.5A, Rad Hard, Positive, High Voltage LDO

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5962R1322001VXC 技术参数

生命周期：Transferred包装说明：DFP,
Reach Compliance Code：compliant风险等级：5.67
最大回动电压 1：0.4 VJESD-30 代码：R-CDFP-F16
长度：10.414 mm功能数量：1
端子数量：16工作温度TJ-Max：150 °C
最大输出电流 1：1.5 A最大输出电压 1：12.7 V
最小输出电压 1：0.6 V封装主体材料：CERAMIC, METAL-SEALED COFIRED
封装代码：DFP封装形状：RECTANGULAR
封装形式：FLATPACK认证状态：Not Qualified
调节器类型：ADJUSTABLE POSITIVE SINGLE OUTPUT LDO REGULATOR筛选级别：MIL-PRF-38535 Class V
座面最大高度：2.92 mm表面贴装：YES
技术：BICMOS端子形式：FLAT
端子节距：1.27 mm端子位置：DUAL
总剂量：100k Rad(Si) V宽度：6.855 mm
Base Number Matches：1

5962R1322001VXC 数据手册

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ISL75052SEH  
Absolute Maximum Ratings  
Thermal Information  
V
V
V
Relative to GND without ion beam (Note 2) . . . . . . . . . . -0.3 to +16.0V  
Relative to GND under ion beam (Note 2) . . . . . . . . . . . -0.3 to +14.7V  
Relative to GND (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +14.7V  
Thermal Resistance (Typical)  
16 Ld CDFP Package (Notes 5, 6) . . . . . . .  
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C  
θ
JA (°C/W)  
26  
θ
JC (°C/W)  
IN  
IN  
4.5  
OUT  
PG,EN,OCP/ADJ,COMP,REFIN,REFOUT relative to GND (Note 2) . . . -0.3to  
+6.5VDC  
Junction Temperature (T ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175°C  
Pb-Free Reflow Profile . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . see link below  
http://www.intersil.com/pbfree/Pb-FreeReflow.asp  
J
Recommended Operating Conditions (Notes 3)  
Radiation Information  
Ambient Temperature Range (T ) . . . . . . . . . . . . . . . . . . .-55°C to +125°C  
A
Junction Temperature (T ) (Note 2). . . . . . . . . . . . . . . . . . . . . . . . . . .+150°C  
J
Maximum Total Dose  
V
Relative to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.0V to 13.2V  
High Dose(Dose Rate = 50 - 300radSi/s) . . . . . . . . . . . .100 krads (Si)  
IN  
V
Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2.5V to 12.7V  
Low Dose(Dose Rate = 10milliradSi/s) (Note 4). . . . . . 100 krads (Si)  
OUT  
2
PG, EN, OCP/ADJ relative to GND . . . . . . . . . . . . . . . . . . . . . . . .0V to +5.5V  
SET (V  
OUT  
within ±5% During Events . . . . . . . . . . . . . . . .86MeV/mg/cm  
2
SEL/B (No Latchup/Burnout. . . . . . . . . . . . . . . . . . . . . . . . 86MeV/mg/cm  
The output capacitance used for SEE testing is 2x100µF for C and C  
,
IN  
OUT  
100nF for BYPASS  
CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product  
reliability and result in failures not covered by warranty.  
NOTES:  
2. Extended operation at these conditions may compromise reliability. Exceeding these limits will result in damage. Recommended operating conditions  
define limits where specifications are guaranteed.  
3. Refer to “Bottom Metal Mounting Guidelines” on page 8.  
4. Product capability established by initial characterization. The "EH" version is acceptance tested on a wafer by wafer basis to 50 krad(Si) at low dose  
rate.  
5. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See  
TechBrief TB379  
6. For θ , the “case temp” location is the center of the exposed metal pad on the package underside.  
JC  
7. Electromigration specification defined as lifetime average junction temperature of +150°C where max rated DC current = lifetime average current.  
Electrical Specifications Unless otherwise noted, all parameters are guaranteed over the following specified conditions:  
V
= V  
OUT  
+ 0.5V, V  
OUT  
= 4.0V, C = C  
IN  
= 2x100µF 60mΩ, KEMET type T541X107N025AH or equivalent, T = +25°C, I = 0A. Applications must follow  
OUT J L  
IN  
thermal guidelines of the package to determine worst case junction temperature. Please refer to “Applications Information” on page 7 of the data sheet  
and Tech Brief TB379. Boldface limits apply over the operating temperature range, -55°C to +125°C. Pulse load techniques used by ATE to ensure T = T  
J
A
defines guaranteed limits.  
MIN  
MAX  
PARAMETER  
DC CHARACTERISTICS  
DC Output Voltage Accuracy  
SYMBOL  
TEST CONDITIONS  
(Note 8) TYP (Note 8) UNITS  
V
V
OUT  
Resistor adjust to: 2.5V and 5.0V  
OUT  
V
= 2.5V, 4.0V < V < 5.0V; 0A < I  
IN  
< 1.5A,  
< 1.5A,  
< 1.5A,  
< 1.5A,  
-1.5  
-2.0  
-1.5  
-2.0  
0.2  
0.2  
0.2  
0.2  
1.5  
2.0  
1.5  
2.0  
%
%
%
%
OUT  
T = -55°C to +125°C  
LOAD  
LOAD  
LOAD  
LOAD  
J
V
= 2.5V, 4.0V < V < 5.0V; 0A < I  
IN  
OUT  
T = +25°C, Post Rad.  
J
V
= 5.0V, 5.5V < V < 6.9V; 0A < I  
IN  
OUT  
T = -55°C to +125°C  
J
V
= 5.0V, 5.5V < V < 6.9V, 0A < I  
IN  
OUT  
T = +25°C, Post Rad.  
J
V
OUT  
Resistor adjust to: 10.0V  
= 10.0V, 10.5V < V < 13.2V, I  
V
0A,  
0A,  
-1.5  
-2.0  
-1.5  
-2.0  
0.2  
0.2  
0.2  
0.2  
1.5  
2.0  
1.5  
2.0  
%
%
%
%
OUT  
T =-55°C to +125°C  
IN  
LOAD =  
J
V
= 10.0V, 10.5V < V < 13.2V, I  
IN  
OUT  
T = +25°C, Post Rad.  
LOAD =  
J
V
= 10.0V, V = 10.5V, I  
IN  
= 1.5A, V =13.2V,  
IN  
OUT  
LOAD  
= 1.0A, T = -55°C to +125°C  
I
LOAD  
J
V
= 10.0V, V = 10.5V; I  
IN LOAD  
=1.5A, V =13.2V,  
IN  
OUT  
I
= 1.0A, T = +25°C, Post Rad.  
LOAD  
J
FN8456.0  
May 29, 2013  
5
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