CY7C1643KV18/CY7C1645KV18
144-Mbit QDR® II+ SRAM Four-Word
Burst Architecture (2.0 Cycle Read Latency)
144-Mbit QDR® II+ SRAM Four-Word Burst Architecture (2.0 Cycle Read Latency)
■ JTAG 1149.1 compatible test access port
Features
■ Phase locked loop (PLL) for accurate data placement
■ Separate independent read and write data ports
❐ Supports concurrent transactions
Configurations
■ 450-MHz clock for high bandwidth
With Read Cycle Latency of 2.0 cycles:
CY7C1643KV18 – 8 M × 18
■ Four-word burst for reducing address bus frequency
■ Double data rate (DDR) interfaces on both read and write ports
(data transferred at 900 MHz) at 450 MHz
CY7C1645KV18 – 4 M × 36
Functional Description
■ Available in 2.0-clock cycle latency
■ Two input clocks (K and K) for precise DDR timing
❐ SRAM uses rising edges only
The CY7C1643KV18, and CY7C1645KV18 are 1.8-V
synchronous pipelined SRAMs, equipped with QDR II+
architecture. Similar to QDR II architecture, QDR II+ architecture
consists of two separate ports: the read port and the write port to
access the memory array. The read port has dedicated data
outputs to support read operations and the write port has
dedicated data inputs to support write operations. QDR II+
architecture has separate data inputs and data outputs to
completely eliminate the need to “turnaround” the data bus that
exists with common I/O devices. Each port is accessed through
a common address bus. Addresses for read and write addresses
are latched on alternate rising edges of the input (K) clock.
Accesses to the QDR II+ read and write ports are completely
independent of one another. To maximize data throughput, both
read and write ports are equipped with DDR interfaces. Each
address location is associated with four 18-bit words
(CY7C1643KV18), or 36-bit words (CY7C1645KV18) that burst
sequentially into or out of the device. Because data is transferred
into and out of the device on every rising edge of both input
clocks (K and K), memory bandwidth is maximized while
simplifying system design by eliminating bus “turnarounds”.
■ Echo clocks (CQ and CQ) simplify data capture in high-speed
systems
■ Data valid pin (QVLD) to indicate valid data on the output
■ Single multiplexed address input bus latches address inputs
for read and write ports
■ Separate port selects for depth expansion
■ Synchronous internally self-timed writes
■ Quad data rate (QDR®) II+ operates with 2.0-cycle read latency
when DOFF is asserted high
■ Operates similar to QDR I device with one cycle read latency
when DOFF is asserted low
■ Available in × 18, and × 36 configurations
■ Full data coherency, providing most current data
[1]
■ Core VDD = 1.8 V ± 0.1 V; I/O VDDQ = 1.4 V to VDD
❐ Supports both 1.5-V and 1.8-V I/O supply
Depth expansion is accomplished with port selects, which
enables each port to operate independently.
■ High-speed transceiver logic (HSTL) Inputs and variable drive
HSTL output buffers
All synchronous inputs pass through input registers controlled by
the K or K input clocks. All data outputs pass through output
registers controlled by the K or K input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
■ Available in 165-ballfine pitch ball grid array (FBGA) package
(15 × 17 × 1.4 mm)
For a complete list of related documentation, click here.
■ Offered in both Pb-free and non Pb-free packages
Selection Guide
Description
Maximum operating frequency
450 MHz
450
400 MHz Unit
400
860
MHz
mA
Maximum operating current
× 18
× 36
940
1290
1170
Note
1. The Cypress QDR II+ devices surpass the QDR consortium specification and can support V
= 1.4 V to V
.
DD
DDQ
Cypress Semiconductor Corporation
Document Number: 001-44059 Rev. *L
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised December 29, 2015
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