ISL70417SEH
Electrical Specifications
V
± 5V, V = 0, V = 0V, T = +25°C, unless otherwise noted. Boldface limits apply over the operating
S
CM
O
A
temperature range, -55°C to +125°C; over a total ionizing dose of 300krad(Si) with exposure at a high dose rate of 50 - 300krad(Si)/s; and over a total
ionizing dose of 50krad(Si) with exposure a low dose rate of <10mrad(Si)/s.
MAX
MIN
PARAMETER
DESCRIPTION
Input Offset Voltage
CONDITIONS
TYP
10
(Note 5)
UNIT
µV
(Note 5)
V
150
250
1
OS
µV
TCV
OS
Offset Voltage Drift
Input Bias Current
0.1
µV/°C
nA
I
-1
-5
0.18
1
B
5
nA
TCI
Input Bias Current Temperature Coefficient
Input Offset Current
-5
1
5
pA/°C
nA
B
I
-1.5
-3
0.3
1.5
3
OS
nA
TCI
Input Offset Current Temperature Coefficient
Input Voltage Range
-3
0.42
145
145
3
pA/°C
V
OS
V
-3
3
CM
CMRR
PSRR
Common-Mode Rejection Ratio
V
V
V
= -3V to +3V
120
120
120
120
3,000
dB
CM
dB
Power Supply Rejection Ratio
= ±2.25V to ±5V
dB
S
dB
A
Open-Loop Gain
= -3.0V to +3.0V
= 10kΩ to ground
14,000
3.7
V/mV
VOL
O
R
L
V
Output Voltage High
R
= 10kΩ to ground
= 2kΩ to ground
= 10kΩ to ground
= 2kΩ to ground
3.5
3.2
3.3
3.0
V
V
OH
L
R
R
R
3.55
-3.7
V
L
L
L
V
V
Output Voltage Low
-3.5
-3.2
-3.3
-3.0
0.53
0.68
V
OL
V
-3.55
0.44
43
V
V
I
Supply Current/Amplifier
Short-Circuit Current
mA
mA
mA
S
I
SC
AC SPECIFICATIONS
GBWP Gain Bandwidth Product
A = 1k, R = 2kΩ
1.5
0.25
12
8.6
8
MHz
V
L
e
Voltage Noise
0.1Hz to 10Hz
f = 10Hz
µV
P-P
np-p
e
e
e
e
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Voltage Noise Density
Current Noise Density
nV/√Hz
nV/√Hz
nV/√Hz
nV/√Hz
pA/√Hz
n
n
n
n
f = 100Hz
f = 1kHz
f = 10kHz
f = 1kHz
8
in
TRANSIENT RESPONSE
SR Slew Rate, V
0.1
20% to 80%
A
= 11, R = 2kΩ, V = 4V
P-P
0.5
V/µs
OUT
V
L
O
July 2, 2012
FN7962.0
6