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5962R0050102VXA PDF预览

5962R0050102VXA

更新时间： 2024-02-04 14:26:35
品牌 Logo 应用领域
美国国家半导体 - NSC 输出元件
页数 文件大小 规格书
13页 301K
描述
IC 1-OUTPUT TWO TERM VOLTAGE REFERENCE, 2.5 V, MBCY3, METAL CAN, TO-46, 3 PIN, Voltage Reference

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5962R0050102VXA 技术参数

生命周期：Active零件包装代码：TO-46
包装说明：,针数：3
Reach Compliance Code：unknownECCN代码：EAR99
HTS代码：8542.39.00.01风险等级：5.55
模拟集成电路 - 其他类型：TWO TERMINAL VOLTAGE REFERENCEJESD-30 代码：O-MBCY-W3
JESD-609代码：e0功能数量：1
输出次数：1端子数量：3
最高工作温度：125 °C最低工作温度：-55 °C
最大输出电压：2.515 V最小输出电压：2.465 V
标称输出电压：2.5 V封装主体材料：METAL
封装形状：ROUND封装形式：CYLINDRICAL
认证状态：Qualified筛选级别：MIL-PRF-38535 Class V
表面贴装：NO技术：BIPOLAR
最大电压温度系数：40 ppm/ °C温度等级：MILITARY
端子面层：TIN LEAD端子形式：WIRE
端子位置：BOTTOM总剂量：100k Rad(Si) V
微调/可调输出：YESBase Number Matches：1

5962R0050102VXA 数据手册

 浏览型号5962R0050102VXA的Datasheet PDF文件第3页浏览型号5962R0050102VXA的Datasheet PDF文件第4页浏览型号5962R0050102VXA的Datasheet PDF文件第5页浏览型号5962R0050102VXA的Datasheet PDF文件第7页浏览型号5962R0050102VXA的Datasheet PDF文件第8页浏览型号5962R0050102VXA的Datasheet PDF文件第9页 
LM136A-2.5 Electrical Characteristics  
DC Parameters  
The following conditions apply, unless otherwise specified. IR = 1mA  
Sub-  
groups  
Symbol  
IAdj  
Parameter  
Adjust Current  
Conditions  
VAdj = 0.7V  
Notes  
Min Max  
Unit  
-125 +125  
6.0  
µA  
mV  
mV  
V
1, 2, 3  
1
Delta VZ  
Delta Zener Voltage  
0.4mA ≤ IZ ≤ 10 mA  
10  
2, 3  
1
VZ  
Zener Voltage  
VAdj = Open  
2.465 2.515  
2.44 2.54  
2.39 2.49  
2.29 2.49  
2.49 2.69  
0.6  
V
2, 3  
1
VAdj = 0.7V  
VAdj = 1.9V  
V
V
2, 3  
1, 2, 3  
1
V
ZRD  
Reverse Dynamic Impedance  
Temperature Stability  
(Note 4)  
(Note 4)  
Ω
Ω
1.0  
2, 3  
2, 3  
VStab  
VZ = Adjusted to 2.490V  
18  
mV  
DC Drift Parameters  
Delta calculations are performed on QMLV devices at Group B, Subgroup 5 only.  
Symbol Parameter Conditions  
VZ Zener Voltage VAdj = Open  
Sub-  
groups  
Notes  
Min Max  
Unit  
−10 +10  
−10 +10  
−10 +10  
mV  
mV  
mV  
1
1
1
VAdj = 0.7V  
VAdj = 1.9V  
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is  
functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed  
specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test  
conditions.  
Note 2: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package  
junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/  
θ
JA or the number given in the Absolute Maximum Ratings, whichever is lower.  
Note 3: Human body model, 1.5KΩ in series with 100pF.  
Note 4: Parameter tested go-no-go only.  
Note 5: Pre and post irradiation limits are identical to those listed under DC electrical characteristics. These parts may be dose rate sensitive in a space  
environment and may demonstrate enhanced low dose rate effect. Radiation end point limits for the noted parameters are guaranteed only for the conditions as  
specified in Mil-Std-883, Method 1019.  
Note 6: Low dose rate testing has been performed on a wafer-by-wafer basis, per test method 1019 condition D of MIL-STD-883, with no enhanced low dose  
rate sensitivity (ELDRS) effect.  
5
www.national.com  
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