Datasheet > 5962F9951101V9A

5962F9951101V9A

更新时间： 2024-09-26 01:07:59

品牌	Logo	应用领域
英特矽尔 - INTERSIL		驱动信息通信管理接口集成电路驱动器
页数	文件大小	规格书
3页	201K
描述
Radiation Hardened Dual, Inverting Power MOSFET Drivers

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5962F9951101V9A 数据手册

Radiation Hardened Dual, Inverting Power MOSFET

Drivers

HS-4423RH, HS-4423EH,

HS-4423BRH, HS-4423BEH

Features

• Electrically screened to DLA SMD # 5962-99511

• QML qualified per MIL-PRF-38535 requirements

• EH version acceptance tested to 50krad(Si) (LDR)

The Radiation Hardened HS-4423RH, HS-4423EH,

HS-4423BRH, HS-4423BEH are inverting, dual, monolithic

high-speed MOSFET drivers designed to convert TTL level

signals into high current outputs at voltages up to 18V.

• Radiation environment

- High dose rate (50-300rad(Si)/s). . . . . . . . . . . 300krad(Si)

- Latch-up immune

The inputs of these devices are TTL compatible and can be

directly driven by our HS-1825ARH PWM device or by our

ACS/ACTS and HCS/HCTS type logic devices. The fast rise

times and high current outputs allow very quick control of high

gate capacitance power MOSFETs in high frequency

applications.

- Low dose rate immune

• I

PEAK

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2A (typ)

• Matched rise and fall times (C = 4300pF) . . . . . . . . 75ns (max)

• Low voltage lock-out feature

The high current outputs minimize power losses in MOSFETs by

rapidly charging and discharging the gate capacitance. The

output stage incorporates a low voltage lock-out circuit that

puts the outputs into a three-state mode when the supply

voltage drops below 10V for the HS-4423RH, HS-4423EH and

7.5V for the HS-4423BRH and HS-4423BEH.

- HS-4423RH, HS-4423EH, . . . . . . . . . . . . . . . . . . . . . <10.0V

- HS-4423BRH, HS-4423BEH . . . . . . . . . . . . . . . . . . . . . <7.5V

• Wide supply voltage range . . . . . . . . . . . . . . . . . . . 12V to 18V

• Prop delay . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .250ns (max)

• Consistent delay times with V changes

Constructed with the Intersil dielectrically isolated Rad Hard

Silicon Gate (RSG) BiCMOS process, these devices are immune

to Single Event Latch-up and have been specifically designed

to provide highly reliable performance in harsh radiation

environments

• Low power consumption

- 40mW with inputs high

- 20mW with inputs low

• Low equivalent input capacitance . . . . . . . . . . . . . 3.2pF (typ)

• ESD protected. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4000V

Applications

• Switching power supplies

• DC/DC converters

• Motor controllers

Pin Configuration

HS-4423RH, HS-4423EH, HS-4423BRH, HS-4423BEH

(FLATPACK CDFP4-F16)

TOP VIEW

IN A

OUT A

GND A

GND B

OUT B

IN B

NOTE: Pins 4 and 5, 10 and 11, 12 and 13, 14 and 15 are double-bonded to their

same electrical points on the die.

February 11, 2014

FN4564.5

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.

Intersil (and design) is a trademark owned by Intersil Corporation or one of its subsidiaries.

All other trademarks mentioned are the property of their respective owners.

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与5962F9951101V9A相关器件

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5962F9951101VXC	INTERSIL	获取价格	Radiation Hardened Dual, Inverting Power MOSFET Drivers
5962F9951102QXC	INTERSIL	获取价格	Radiation Hardened Dual, Inverting Power MOSFET Drivers
5962F9951102VXC	INTERSIL	获取价格	Radiation Hardened Dual, Inverting Power MOSFET Drivers
5962F9951103V9A	INTERSIL	获取价格	Radiation Hardened Dual, Inverting Power MOSFET Drivers
5962F9951103VXC	INTERSIL	获取价格	Radiation Hardened Dual, Inverting Power MOSFET Drivers
5962F9951104VXC	INTERSIL	获取价格	Radiation Hardened Dual, Inverting Power MOSFET Drivers
5962F9953601QXC	INTERSIL	获取价格	Radiation Hardened High Frequency Half Bridge Driver
5962F9953601VXC	INTERSIL	获取价格	Radiation Hardened High Frequency Half Bridge Driver
5962F9953602QXC	INTERSIL	获取价格	Radiation Hardened High Frequency Half Bridge Driver
5962F9953602V9A	INTERSIL	获取价格	Radiation Hardened High Frequency Half Bridge Drivers

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