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5962-9690202HMC PDF预览

5962-9690202HMC

更新时间: 2024-01-15 10:03:52
品牌 Logo 应用领域
WEDC 静态存储器内存集成电路
页数 文件大小 规格书
20页 147K
描述
Standard SRAM, 256KX16, 25ns, CMOS, CDSO44, CERAMIC, SOJ-44

5962-9690202HMC 技术参数

生命周期:Obsolete零件包装代码:SOJ
包装说明:SOJ,针数:44
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.84
最长访问时间:25 nsJESD-30 代码:R-CDSO-J44
JESD-609代码:e4长度:28.695 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:256KX16封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:SOJ封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
认证状态:Not Qualified筛选级别:MIL-STD-883
座面最大高度:3.96 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:GOLD
端子形式:J BEND端子节距:1.27 mm
端子位置:DUAL宽度:10.16 mm
Base Number Matches:1

5962-9690202HMC 数据手册

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REVISIONS  
LTR  
DESCRIPTION  
DATE (YR-MO-DA)  
APPROVED  
A
B
Add case outlines N and T.  
98-06-01  
98-12-09  
K. A. Cottongim  
K. A. Cottongim  
Changed figure 1 for case outlines N and T to allow for pedestal or  
non-pedestal version of these case outlines. -sld  
C
D
Added device type 04. -sld  
99-04-02  
00-11-03  
K. A. Cottongim  
Add note to paragraph 1.2.2 and table I. Table I, add note 3 to CIN  
and COUT tests.  
Raymond Monnin  
E
F
Made corrections to table I in the conditions for the standby current  
and output leakage current tests. Made corrections to figures 5 and 6.  
Updated drawing to reflect the latest requirements of MIL-PRF-38534.  
-sld  
03-12-22  
04-10-25  
Raymond Monnin  
Raymond Monnin  
Table I; Changed the IOL from 8 mA to 6 mA VOL test. Editorial  
changes throughout. -sld  
REV  
SHEET  
REV  
F
F
F
F
F
SHEET  
15  
16  
17  
18  
19  
REV STATUS  
OF SHEETS  
REV  
F
1
F
2
F
3
F
4
F
5
F
F
7
F
8
F
9
F
F
F
F
F
SHEET  
6
10  
11  
12  
13  
14  
PMIC N/A  
PREPARED BY  
Steve L. Duncan  
DEFENSE SUPPLY CENTER COLUMBUS  
STANDARD  
MICROCIRCUIT  
DRAWING  
CHECKED BY  
Michael C. Jones  
COLUMBUS, OHIO 43218-3990  
http://www.dscc.dla.mil/  
THIS DRAWING IS  
AVAILABLE  
FOR USE BY ALL  
DEPARTMENTS  
APPROVED BY  
Kendall A. Cottongim  
MICROCIRCUIT, HYBRID, MEMORY, STATIC  
RANDOM ACCESS MEMORY (SRAM) 256K x  
16-BIT  
DRAWING APPROVAL DATE  
97-12-23  
AND AGENCIES OF THE  
DEPARTMENT OF DEFENSE  
AMSC N/A  
REVISION LEVEL  
SIZE  
A
CAGE CODE  
67268  
F
5962-96902  
SHEET  
1 OF 19  
DSCC FORM 2233  
APR 97  
5962-E012-05  

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