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5962-9474901MEA PDF预览

5962-9474901MEA

更新时间: 2024-01-19 10:55:57
品牌 Logo 应用领域
其他 - ETC 晶体晶体管
页数 文件大小 规格书
10页 44K
描述
TRANSISTOR | BJT | ARRAY | INDEPENDENT | 8V V(BR)CEO | 11.3MA I(C) | DIP

5962-9474901MEA 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-GDIP-T16
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.65其他特性:HIGH RELIABILITY
最大集电极电流 (IC):0.0113 A集电极-发射极最大电压:8 V
配置:SEPARATE, 5 ELEMENTS最高频带:ULTRA HIGH FREQUENCY BAND
JESD-30 代码:R-GDIP-T16元件数量:5
端子数量:16封装主体材料:CERAMIC, GLASS-SEALED
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:NPN认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:DUAL晶体管元件材料:SILICON
Base Number Matches:1

5962-9474901MEA 数据手册

 浏览型号5962-9474901MEA的Datasheet PDF文件第4页浏览型号5962-9474901MEA的Datasheet PDF文件第5页浏览型号5962-9474901MEA的Datasheet PDF文件第6页浏览型号5962-9474901MEA的Datasheet PDF文件第8页浏览型号5962-9474901MEA的Datasheet PDF文件第9页浏览型号5962-9474901MEA的Datasheet PDF文件第10页 
4. QUALITY ASSURANCE PROVISIONS  
4.1 Sampling and inspection. For device classes Q and V, sampling and inspection procedures shall be in accordance with  
MIL-PRF-38535 or as modified in the device manufacturer's Quality Management (QM) plan. The modification in the QM plan  
shall not affect the form, fit, or function as described herein. For device class M, sampling and inspection procedures shall be  
in accordance with MIL-PRF-38535, appendix A.  
4.2 Screening. For device classes Q and V, screening shall be in accordance with MIL-PRF-38535, and shall be conducted  
on all devices prior to qualification and technology conformance inspection. For device class M, screening shall be in  
accordance with method 5004 of MIL-STD-883, and shall be conducted on all devices prior to quality conformance inspection.  
4.2.1 Additional criteria for device class M.  
a. Burn-in test, method 1015 of MIL-STD-883.  
(1) Test condition A, B, C, or D. The test circuit shall be maintained by the manufacturer under document revision  
level control and shall be made available to the preparing or acquiring activity upon request. The test circuit shall  
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in  
test method 1015.  
(2) T = +125°C, minimum.  
A
b. Interim and final electrical test parameters shall be as specified in table II herein.  
4.2.2 Additional criteria for device classes Q and V.  
a. The burn-in test duration, test condition and test temperature, or approved alternatives shall be as specified in the  
device manufacturer's QM plan in accordance with MIL-PRF-38535. The burn-in test circuit shall be maintained under  
document revision level control of the device manufacturer's Technology Review Board (TRB) in accordance with  
MIL-PRF-38535 and shall be made available to the acquiring or preparing activity upon request. The test circuit shall  
specify the inputs, outputs, biases, and power dissipation, as applicable, in accordance with the intent specified in test  
method 1015 of MIL-STD-883.  
b. Interim and final electrical test parameters shall be as specified in table II herein.  
c. Additional screening for device class V beyond the requirements of device class Q shall be as specified in  
MIL-PRF-38535, appendix B.  
4.3 Qualification inspection for device classes Q and V. Qualification inspection for device classes Q and V shall be in  
accordance with MIL-PRF-38535. Inspections to be performed shall be those specified in MIL-PRF-38535 and herein for  
groups A, B, C, D, and E inspections (see 4.4.1 through 4.4.4).  
4.4 Conformance inspection. Technology conformance inspection for classes Q and V shall be in accordance with  
MIL-PRF-38535 including groups A, B, C, D, and E inspections and as specified herein. Quality conformance inspection for  
device class M shall be in accordance with MIL-PRF-38535, appendix A and as specified herein. Inspections to be performed  
for device class M shall be those specified in method 5005 of MIL-STD-883 and herein for groups A, B, C, D, and E inspections  
(see 4.4.1 through 4.4.4).  
4.4.1 Group A inspection.  
a. Tests shall be as specified in table II herein.  
b. Subgroups 4, 5, 6, 7, 8, 9, 10, and 11 in table I, method 5005 of MIL-STD-883 shall be omitted.  
SIZE  
STANDARD  
5962-94749  
A
MICROCIRCUIT DRAWING  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43216-5000  
REVISION LEVEL  
SHEET  
B
7
DSCC FORM 2234  
APR 97  

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