Datasheet > 5962-9474901MEA

5962-9474901MEA

更新时间： 2024-02-10 00:36:21

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
10页	44K
描述
TRANSISTOR \| BJT \| ARRAY \| INDEPENDENT \| 8V V(BR)CEO \| 11.3MA I(C) \| DIP

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5962-9474901MEA 技术参数

生命周期：	Obsolete	包装说明：	IN-LINE, R-GDIP-T16
Reach Compliance Code：	unknown	ECCN代码：	EAR99
风险等级：	5.65	其他特性：	HIGH RELIABILITY
最大集电极电流 (IC)：	0.0113 A	集电极-发射极最大电压：	8 V
配置：	SEPARATE, 5 ELEMENTS	最高频带：	ULTRA HIGH FREQUENCY BAND
JESD-30 代码：	R-GDIP-T16	元件数量：	5
端子数量：	16	封装主体材料：	CERAMIC, GLASS-SEALED
封装形状：	RECTANGULAR	封装形式：	IN-LINE
极性/信道类型：	NPN	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	DUAL	晶体管元件材料：	SILICON
Base Number Matches：	1

5962-9474901MEA 数据手册

1.3 Absolute maximum ratings. 1/

Collector to emitter voltage (open base) ...........................................+8 V dc

Collector to base voltage (short base) ..............................................+12 V dc

Emitter to base voltage (reversed bias) ............................................+5.5 V dc

Collector current at 100% duty cycle, 175°C, T ..............................11.3 mA

Power dissipation (P ) .....................................................................1.33 W 2/

Junction temperature (T ) .................................................................+175°C

Storage temperature range ..............................................................-65°C ≤ T ≤ +150°C

Lead temperature (soldering, 10 seconds) .......................................+300°C

Thermal resistance, junction-to-case (θ ) ......................................24°C/W

Thermal resistance, junction-to-ambient (θ ) .................................80°C/W

1.4 Recommended operating conditions.

Ambient operating temperature range (T ) ......................................-55°C ≤ T ≤ +125°C

2. APPLICABLE DOCUMENTS

2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a

part of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in

the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the

solicitation.

SPECIFICATION

DEPARTMENT OF DEFENSE

MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.

STANDARDS

DEPARTMENT OF DEFENSE

MIL-STD-883

Test Method Standard Microcircuits.

MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.

HANDBOOKS

DEPARTMENT OF DEFENSE

MIL-HDBK-103 - List of Standard Microcircuit Drawings.

MIL-HDBK-780 - Standard Microcircuit Drawings.

(Unless otherwise indicated, copies of the specification, standards, and handbooks are available from the Standardization

Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)

2.2 Order of precedence. In the event of a conflict between the text of this drawing and the references cited herein, the text

of this drawing takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a

specific exemption has been obtained.

_____

1/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the

maximum levels may degrade performance and affect reliability.

2/ Derate above +75°C at 13.3 mW/°C.

SIZE

STANDARD

5962-94749

MICROCIRCUIT DRAWING

DEFENSE SUPPLY CENTER COLUMBUS

COLUMBUS, OHIO 43216-5000

REVISION LEVEL

SHEET

DSCC FORM 2234

APR 97

1 234 5 6 7...10

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