Datasheet > 5962-931552HYX

5962-931552HYX

更新时间： 2023-02-15 00:00:00

品牌	Logo	应用领域
玛居礼 - MERCURY		可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数	文件大小	规格书
14页	1258K
描述
EEPROM

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数据手册

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5962-931552HYX 数据手册

WE512K8, WE256K8,

WE128K8-XCX

DATA POLLING

Operation with data polling permits a faster method of writing to the

EEPROM. The actual time to complete the memory programming

cycle is faster than the guaranteed maximum.

A polled byte write sequence would consist of the following steps:

1. write byte to EEPROM

2. store last byte and last address written

3. release a time slice to other tasks

The EEPROM features a method to determine when the internal

programming cycle is completed.After a write cycle is initiated, the

EEPROM will respond to read cycles to provide the microprocessor

with the status of the programming cycle. The status consists

of the last data byte written being returned with data bit I/O₇

complemented during the programming cycle, and I/O₇true after

completion.

4. read byte from EEPROM - last address

5. compare I/O7 to stored value

a) If different, write cycle is not completed, go to step 3.

b) If same, write cycle is completed, go to step 1 or step 3.

Data polling allows a simple bit test operation to determine the

status of the EEPROM. During the internal programming cycle,

a read of the last byte written will produce the complement of the

data on I/O7. For example, if the data written consisted of I/O7 =

HIGH, then the data read back would consist of I/O7 = LOW.

DATA POLLING AC CHARACTERISTICS

V_CC= 5.0V, V_SS= 0V, -55°C ≤ T_A≤ +125°C

512Kx8 256Kx8

128Kx8

Parameter

Symbol

Unit

Min

Max

Min

Max

Min

Max

Data Hold Time

t^DH

t^OEH

tOE

Output Enable Hold Time

Output Enable To Output Delay

Write Recovery Time

100

t^WR

FIGURE 8 – DATA POLLING WAVEFORMS

WE_1-4

CS_1-4

OE#

I/O₇

ADDRESS

Microsemi Corporation reserves the right to change products or speciﬁcations without notice.

Rev. 4

Microsemi Corporation • (602) 437-1520 • www.microsemi.com

1...5 6 789 10 11...14

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