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5962-0622901VXC PDF预览

5962-0622901VXC

更新时间: 2024-02-17 04:11:13
品牌 Logo 应用领域
爱特美尔 - ATMEL 存储内存集成电路静态存储器
页数 文件大小 规格书
19页 376K
描述
Rad Hard 16 MegaBit 3.3V 5V Tolerant SRAM Multi- Chip Module

5962-0622901VXC 技术参数

生命周期:Active零件包装代码:QFP
包装说明:QFF,针数:68
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.34
Is Samacsys:N最长访问时间:25 ns
其他特性:IT CAN BE USED AS 2 BANK OF 512K X 16 OR 4 BANK OF 512K X 8 ALSOJESD-30 代码:S-CQFP-F68
JESD-609代码:e4长度:24.13 mm
内存密度:16777216 bit内存集成电路类型:STANDARD SRAM
内存宽度:32功能数量:1
端子数量:68字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:512KX32封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:QFF封装形状:SQUARE
封装形式:FLATPACK并行/串行:PARALLEL
认证状态:Qualified筛选级别:MIL-PRF-38535 Class V
座面最大高度:4.7 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:GOLD
端子形式:FLAT端子节距:1.27 mm
端子位置:QUAD宽度:24.13 mm
Base Number Matches:1

5962-0622901VXC 数据手册

 浏览型号5962-0622901VXC的Datasheet PDF文件第5页浏览型号5962-0622901VXC的Datasheet PDF文件第6页浏览型号5962-0622901VXC的Datasheet PDF文件第7页浏览型号5962-0622901VXC的Datasheet PDF文件第9页浏览型号5962-0622901VXC的Datasheet PDF文件第10页浏览型号5962-0622901VXC的Datasheet PDF文件第11页 
Consumption  
AT68166FT-25  
AT68166FT-20  
AT68166FT-18  
(preliminary)  
TAVAV/TAVAW  
Test Condition  
Symbol  
Description  
Unit  
Value  
Standby  
Supply  
Current  
(1)  
ICCSB  
10  
8
7
6
7.5  
7
mA  
max  
Standby  
Supply  
Current  
(2)  
ICCSB1  
mA  
mA  
max  
max  
18 ns  
20 ns  
25 ns  
50 ns  
1 µs  
170  
165  
145  
80  
(3)  
165  
145  
80  
ICCOP  
Dynamic  
Operating  
Current  
Read per  
byte  
150  
85  
15  
12  
12  
18 ns  
20 ns  
25 ns  
50 ns  
1 µs  
145  
140  
135  
115  
105  
(4)  
140  
135  
115  
105  
ICCOP  
Dynamic  
Operating  
Current  
Write per  
byte  
150  
125  
110  
mA  
max  
Notes: 1. All CSx >VIH  
2. All CSx > VCC - 0.3V  
3. F = 1/TAVAV, Iout = 0 mA, WEx = OE = VIH, VIN = GND/VCC, VCC max.  
4. F = 1/TAVAW, Iout = 0 mA, WEx = VIL, OE = VIH , VIN = GND/VCC, VCC max.  
Data Retention  
Mode  
Atmel CMOS RAM's are designed with battery backup in mind. Data retention voltage and sup-  
ply current are guaranteed over temperature. The following rules insure data retention:  
1. During data retention chip select CSx must be held high within VCC to VCC -0.2V.  
2. Output Enable (OE) should be held high to keep the RAM outputs high impedance, mini-  
mizing power dissipation.  
3. During power-up and power-down transitions CSx and OE must be kept between VCC  
0.3V and 70% of VCC.  
+
4. The RAM can begin operation > tR ns after VCC reaches the minimum operation voltages  
(3V).  
Figure 5. Data Retention Timing  
vcc  
CSx  
8
AT68166FT  
7531H–AERO–04/09  

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