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50RIA120S90 PDF预览

50RIA120S90

更新时间: 2024-01-11 16:24:10
品牌 Logo 应用领域
英飞凌 - INFINEON 栅极触发装置可控硅整流器
页数 文件大小 规格书
8页 209K
描述
MEDIUM POWER THYRISTORS

50RIA120S90 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-65
包装说明:POST/STUD MOUNT, O-MUPM-D2针数:2
Reach Compliance Code:compliantHTS代码:8541.30.00.80
风险等级:5.11配置:SINGLE
最大直流栅极触发电流:100 mAJEDEC-95代码:TO-208AC
JESD-30 代码:O-MUPM-D2元件数量:1
端子数量:2最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:METAL
封装形状:ROUND封装形式:POST/STUD MOUNT
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大均方根通态电流:80 A断态重复峰值电压:1200 V
重复峰值反向电压:1200 V表面贴装:NO
端子形式:SOLDER LUG端子位置:UPPER
处于峰值回流温度下的最长时间:40触发设备类型:SCR
Base Number Matches:1

50RIA120S90 数据手册

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50RIA Series  
Bulletin I2401 rev. A 07/00  
ELECTRICAL SPECIFICATIONS  
Voltage Ratings  
Voltage  
Code  
VDRM/VRRM, max. repetitive  
VRSM , maximum non-  
IDRM/IRRM max.  
Type number  
50RIA  
peak and off-state voltage (1)  
repetitive peak voltage (2)  
@ T = TJ max.  
V
100  
200  
400  
600  
V
150  
300  
500  
700  
J mA  
10  
20  
40  
60  
80  
800  
900  
15  
100  
120  
140  
160  
1000  
1200  
1400  
1600  
1100  
1300  
1500  
1700  
(1) Units may be broken over non-repetitively in the off-state direction without damage, if dI/dt does not exceed 20A/µs  
(2) For voltage pulses with tp 5ms  
On-state Conduction  
50RIA  
10to120 140to160  
Parameter  
Units Conditions  
IT(AV)  
Max. average on-state current  
@ Case temperature  
50  
94  
50  
90  
A
°C  
180° sinusoidal conduction  
IT(RMS) Max. RMS on-state current  
80  
80  
A
A
ITSM  
Max. peak, one-cycle  
1430  
1490  
1200  
1255  
10.18  
9.30  
7.20  
6.56  
101.8  
0.94  
1200  
1257  
1010  
1057  
7.21  
6.58  
5.10  
4.65  
72.1  
1.02  
t = 10ms  
t = 8.3ms  
t = 10ms  
t = 8.3ms  
No voltage  
reapplied  
non-repetitive surge current  
100% VRRM  
reapplied  
Sinusoidal half wave,  
Initial TJ = TJ max.  
I2t  
Maximum I2t for fusing  
KA2s t = 10ms  
No voltage  
reapplied  
t = 8.3ms  
t = 10ms  
100% VRRM  
t = 8.3ms  
reapplied  
I2t  
Maximum I2t for fusing  
KA2s t = 0.1 to 10ms, no voltage reapplied, TJ = TJ max.  
VT(TO)1 Low level value of threshold  
voltage  
V
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
(π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ max.  
(16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.  
(π x IT(AV) < I < 20 x π x IT(AV)), TJ = TJ max.  
VT(TO) High level value of threshold  
1.08  
4.08  
3.34  
1.17  
4.78  
3.97  
2
voltage  
rt1  
rt2  
Low level value of on-state  
slope resistance  
High level value of on-state  
slope resistance  
mΩ  
VTM  
IH  
Max. on-state voltage  
1.60  
1.78  
V
I = 157 A, TJ = 25°C  
pk  
Maximum holding current  
200  
400  
mA  
TJ = 25°C. Anode supply 22V, resistive load,  
Initial IT = 2A  
Anode supply 6V, resistive load  
IL  
Latching current  
2
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