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4N35SV

更新时间: 2024-01-29 00:35:06
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体光电晶体管光电晶体管输出元件
页数 文件大小 规格书
15页 212K
描述
GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS

4N35SV 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:SURFACE MOUNT, PLASTIC PACKAGE-6
Reach Compliance Code:compliantHTS代码:8541.40.80.00
风险等级:2.13其他特性:UL RECOGNIZED, VDE APPROVED
Coll-Emtr Bkdn Voltage-Min:30 V配置:SINGLE
当前传输比率-最小值:100%标称电流传输比:100%
最大暗电源:50 nA最大正向电流:0.06 A
最大正向电压:1.5 V最大绝缘电压:5300 V
安装特点:SURFACE MOUNT元件数量:1
最高工作温度:100 °C最低工作温度:-55 °C
光电设备类型:TRANSISTOR OUTPUT OPTOCOUPLER最大功率耗散:0.16 W
最长响应时间:0.00001 s子类别:Optocoupler - Transistor Outputs
表面贴装:YESBase Number Matches:1

4N35SV 数据手册

 浏览型号4N35SV的Datasheet PDF文件第4页浏览型号4N35SV的Datasheet PDF文件第5页浏览型号4N35SV的Datasheet PDF文件第6页浏览型号4N35SV的Datasheet PDF文件第8页浏览型号4N35SV的Datasheet PDF文件第9页浏览型号4N35SV的Datasheet PDF文件第10页 
GENERAL PURPOSE 6-PIN  
PHOTOTRANSISTOR OPTOCOUPLERS  
4N25  
4N37  
4N26  
H11A1  
4N27  
H11A2  
4N28  
H11A3  
4N35  
H11A4  
4N36  
H11A5  
Fig. 8 CTR vs. RBE (Unsaturated)  
(White Package)  
Fig. 7 CTR vs. RBE (Unsaturated)  
(Black Package)  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
I
F
= 20 mA  
V
= 5.0 V  
CE  
I
= 10 mA  
F
I
I
= 20 mA  
= 10 mA  
F
I
F
= 5 mA  
F
I
F
= 5 mA  
V
CE  
= 5.0 V  
10  
100  
1000  
10  
100  
- BASE RESISTANCE (kΩ)  
1000  
R
- BASE RESISTANCE (kΩ)  
BE  
R
BE  
Fig. 9 CTR vs. RBE (Saturated)  
(Black Package)  
Fig. 10 CTR vs. RBE (Saturated)  
(White Package)  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
0.0  
V
CE  
= 0.3 V  
V
CE  
= 0.3 V  
I
I
= 20 mA  
= 10 mA  
F
I
= 20 mA  
= 10 mA  
F
F
I
F
I
F
= 5 mA  
I
F
= 5 mA  
10  
100  
- BASE RESISTANCE (k Ω)  
1000  
10  
100  
- BASE RESISTANCE (k Ω)  
1000  
R
R
BE  
BE  
Fig. 12 Collector-Emitter Saturation Voltage vs Collector Current  
(White Package)  
Fig. 11 Collector-Emitter Saturation Voltage vs Collector Current  
(Black Package)  
100  
10  
1
100  
T
A
= 25˚C  
10  
1
I
F
= 2.5 mA  
I = 2.5 mA  
F
0.1  
0.01  
0.1  
I
F
= 20 mA  
I
F
= 10 mA  
I
F
= 20 mA  
0.01  
I
F
= 5 mA  
0.1  
I
F
= 5 mA  
I
F
= 10 mA  
T
A
= 25˚C  
0.001  
0.001  
0.01  
1
10  
0.01  
0.1  
1
10  
I
- COLLECTOR CURRENT (mA)  
C
I
- COLLECTOR CURRENT (mA)  
C
© 2003 Fairchild Semiconductor Corporation  
Page 7 of 15  
5/7/03  

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