5秒后页面跳转
4GBJ808 PDF预览

4GBJ808

更新时间: 2024-02-02 23:30:34
品牌 Logo 应用领域
虹扬 - HY /
页数 文件大小 规格书
2页 42K
描述
GLASS PASSIVATED BRIDGE RECTIFIERS

4GBJ808 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.78
二极管类型:BRIDGE RECTIFIER DIODEBase Number Matches:1

4GBJ808 数据手册

 浏览型号4GBJ808的Datasheet PDF文件第2页 
4GBJ8005 thru 4GBJ810  
GLASS PASSIVATED  
BRIDGE RECTIFIERS  
REVERSE VOLTAGE  
FORWARD CURRENT  
- 50 to 1000Volts  
- 8.0 Amperes  
FEATURES  
Rating to 1000V PRV  
4GBJ  
.134(3.4)  
Ø
Ideal for printed circuit board  
.122(3.1)  
Ø
.189(4.8)  
.995(25.3)  
.983(24.7)  
.173(4.4)  
.150(3.8)  
.134(3.4)  
Low forward voltage drop,high current capability  
Reliable low cost construction utilizing molded plastic  
technique results in inexpensive product  
The plastic material has U/L flammability  
Ø Ø  
classification 94V-0  
+
-
~ ~  
.057(1.45)  
.041(1.05)  
.083(2.1)  
.069(1.7)  
.114(2.9)  
.098(2.5)  
.043(1.1)  
.035(0.9)  
.031(0.8)  
.023(0.6)  
.303(7.7) .303(7.7) .303(7.7)  
.287(7.3) .287(7.3) .287(7.3)  
SPACING  
Dimensions in inches and (milimeters)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave ,60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
4GBJ  
8005  
4GBJ  
801  
4GBJ  
802  
4GBJ  
804  
4GBJ  
806  
4GBJ  
808  
4GBJ  
810  
SYMBOL  
UNIT  
CHARACTERISTICS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50  
30  
50  
100  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
V
V
V
70  
700  
Maximum DC Blocking Voltage  
100  
1000  
8.0  
2.9  
Maximum Average Forward (with heatsink Note 2)  
I(AV)  
A
Rectified Current  
@ TC=100(without heatsink)  
Peak Forward Surage Current  
IFSM  
200  
A
8.3ms Single Half Sine-Wave  
Super Imposed on Rated Load (JEDEC Method)  
1.1  
Maximum Forward Voltage at 4.0A DC  
VF  
IR  
V
10.0  
500  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
@ TJ=25℃  
uA  
@ TJ=125℃  
I2t  
CJ  
A2s  
pF  
I2t Rating for Fusing (t<8.3ms)  
120  
55  
Typical Junction Capacitance Per Element (Note1)  
Typical Thermal Resistance (Note2)  
Operating Temperature Range  
RθJC  
TJ  
/W  
1.8  
-55 to +150  
-55 to +150  
Storage Temperature Range  
TSTG  
NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
2.Device mounted on 75mm*75mm*1.6mm cu plate heatsink.  
~ 307 ~  

与4GBJ808相关器件

型号 品牌 描述 获取价格 数据表
4GBJ810 HY GLASS PASSIVATED BRIDGE RECTIFIERS

获取价格

4GBJ810 SECOS Voltage 50V ~ 1000V 8.0 Amp Glass Passivited Bridge Rectifiers

获取价格

4GBJ8A FORMOSA Bridge Rectifier

获取价格

4GBJ8B FORMOSA Bridge Rectifier

获取价格

4GBJ8D FORMOSA Bridge Rectifier

获取价格

4GBJ8G FORMOSA Bridge Rectifier

获取价格