4GBJ1010

更新时间： 2024-01-09 22:49:37

品牌	Logo	应用领域
虹扬 - HY		整流二极管桥式整流二极管局域网
页数	文件大小	规格书
2页	42K
描述
GLASS PASSIVATED BRIDGE RECTIFIERS

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技术参数
数据手册

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4GBJ1010 技术参数

生命周期：	Contact Manufacturer	包装说明：	R-PSFM-T4
针数：	4	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.80
风险等级：	5.74	Is Samacsys：	N
最小击穿电压：	1000 V	外壳连接：	ISOLATED
配置：	BRIDGE, 4 ELEMENTS	二极管元件材料：	SILICON
二极管类型：	BRIDGE RECTIFIER DIODE	JESD-30 代码：	R-PSFM-T4
最大非重复峰值正向电流：	170 A	元件数量：	4
相数：	1	端子数量：	4
最高工作温度：	150 °C	最低工作温度：	-55 °C
最大输出电流：	3 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
最大重复峰值反向电压：	1000 V	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	SINGLE
Base Number Matches：	1

4GBJ1010 数据手册

4GBJ10005 thru 4GBJ1010

GLASS PASSIVATED

BRIDGE RECTIFIERS

REVERSE VOLTAGE - 50 to 1000Volts

FORWARD CURRENT - 10 Amperes

FEATURES

●Rating to 1000V PRV

4GBJ

●Ideal for printed circuit board

.134(3.4)

.122(3.1)

●Low forward voltage drop,high current capability

●Reliable low cost construction utilizing molded plastic

.189(4.8)

.173(4.4)

.150(3.8)

.134(3.4)

.995(25.3)

.983(24.7)

technique results in inexpensive product

●The plastic material has UL flammability

classification 94V-0

Ø Ø

~ ~

.057(1.45)

.041(1.05)

.083(2.1)

.069(1.7)

.114(2.9)

.098(2.5)

.043(1.1)

.035(0.9)

.031(0.8)

.023(0.6)

.303(7.7) .303(7.7) .303(7.7)

.287(7.3) .287(7.3) .287(7.3)

SPACING

Dimensions in inches and (milimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25℃ ambient temperature unless otherwise specified.

Single phase, half wave ,60Hz, resistive or inductive load.

For capacitive load, derate current by 20%

4GBJ

10005

4GBJ

1001

4GBJ

1002

4GBJ

1004

4GBJ

1006

4GBJ

1008

4GBJ

1010

SYMBOL

UNIT

CHARACTERISTICS

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

VRRM

VRMS

VDC

100

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

10.0

3.0

Maximum Average Forward (with heatsink Note 2)

I(AV)

Rectified Current

@ TC=110℃ (without heatsink)

Peak Forward Surage Current

IFSM

220

8.3ms Single Half Sine-Wave

Super Imposed on Rated Load (JEDEC Method)

1.1

Maximum Forward Voltage at 5.0A DC

10.0

500

Maximum DC Reverse Current

at Rated DC Blocking Voltage

@ TJ=25℃

@ TJ=125℃

I²t

A²s

I²t Rating for Fusing (t<8.3ms)

120

Typical Junction Capacitance Per Element (Note1)

Typical Thermal Resistance (Note2)

Operating Temperature Range

RθJC

℃/W

℃

1.4

-55 to +150

Storage Temperature Range

TSTG

℃

NOTES: 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Device mounted on 150mm*150mm*1.6mm cu plate heatsink.

~ 313 ~

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