Datasheet > 478ST89E

478ST89E

更新时间： 2022-09-19 12:11:15

品牌	Logo	应用领域
HITTITE		放大器
页数	文件大小	规格书
6页	231K
描述
SiGe HBT GAIN BLOCK MMIC AMPLIFIER, DC - 4 GHz

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478ST89E 数据手册

HMC478ST89 / 478ST89E

v05.0710

SiGe HBT GAIN BLOCK

MMIC AMPLIFIER, DC - 4 GHz

Pin Descriptions

Pin Number

Function

Description

Interface Schematic

This pin is DC coupled.

An off chip DC blocking capacitor is required.

RFIN

RFOUT

GND

RF output and DC Bias (Vcc) for the output stage.

These pins and package bottom

must be connected to RF/DC ground.

2, 4

Application Circuit

Recommended Bias Resistor Values

for Icc= 62 mA, Rbias= (Vs - Vcc) / Icc

Supply Voltage (Vs)

Note:

1. External blocking capacitors are required on

RFIN and RFOUT.

2. R^BIASprovides DC bias stability over temperature.

R^BIASVALUE

18 Ω

1/8 W

35 Ω

1/4 W

67 Ω

1/2 W

R^BIASPOWER RATING

Recommended Component Values for Key Application Frequencies

Frequency (MHz)

Component

900

1900

18 nH

100 pF

2200

18 nH

100 pF

2400

15 nH

100 pF

3500

8.2 nH

100 pF

270 nH

0.01 μF

56 nH

100 pF

C1, C2

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824

Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com

Application Support: Phone: 978-250-3343 or apps@hittite.com

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