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43CTQ080GS PDF预览

43CTQ080GS

更新时间: 2024-10-03 06:27:27
品牌 Logo 应用领域
威世 - VISHAY 整流二极管
页数 文件大小 规格书
6页 132K
描述
Schottky Rectifier, 2 x 20 A

43CTQ080GS 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-263包装说明:R-PSSO-G2
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.22其他特性:FREE WHEELING DIODE, HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.67 V
JESD-30 代码:R-PSSO-G2最大非重复峰值正向电流:850 A
元件数量:2相数:1
端子数量:2最高工作温度:175 °C
最大输出电流:20 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:80 V子类别:Rectifier Diodes
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

43CTQ080GS 数据手册

 浏览型号43CTQ080GS的Datasheet PDF文件第2页浏览型号43CTQ080GS的Datasheet PDF文件第3页浏览型号43CTQ080GS的Datasheet PDF文件第4页浏览型号43CTQ080GS的Datasheet PDF文件第5页浏览型号43CTQ080GS的Datasheet PDF文件第6页 
43CTQ...GS/43CTQ...G-1  
Vishay High Power Products  
Schottky Rectifier, 2 x 20 A  
FEATURES  
43CTQ...G-1  
43CTQ...GS  
• 175 °C TJ operation  
• Center tap configuration  
• Low forward voltage drop  
• High purity, high temperature epoxy encapsulation for  
enhanced mechanical strength and moisture resistance  
Base  
common  
cathode  
Common  
cathode  
• High frequency operation  
2
2
• Guard ring for enhanced ruggedness and long term  
reliability  
• Designed and qualified for industrial level  
2
2
1
1
3
3
Common  
Common  
DESCRIPTION  
cathode  
Anode  
Anode  
Anode  
Anode  
cathode  
This center tap Schottky rectifier series has been optimized  
for very low reverse leakage at high temperature. The  
proprietary barrier technology allows for reliable operation up  
to 175 °C junction temperature. Typical applications are in  
switching power supplies, converters, freewheeling diodes,  
and reverse battery protection.  
D2PAK  
TO-262  
PRODUCT SUMMARY  
IF(AV)  
2 x 20 A  
80/100 V  
VR  
MAJOR RATINGS AND CHARACTERISTICS  
SYMBOL  
IF(AV)  
VRRM  
IFSM  
CHARACTERISTICS  
VALUES  
40  
UNITS  
Rectangular waveform  
A
V
80/100  
850  
tp = 5 µs sine  
A
VF  
20 Apk, TJ = 125 °C (per leg)  
Range  
0.67  
V
TJ  
- 55 to 175  
°C  
VOLTAGE RATINGS  
PARAMETER  
43CTQ080GS  
43CTQ080G-1  
43CTQ100GS  
43CTQ100G-1  
SYMBOL  
UNITS  
Maximum DC reverse voltage  
VR  
80  
100  
V
Maximum working peak reverse voltage  
VRWM  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
VALUES  
UNITS  
Maximum average  
forward current  
See fig. 5  
per leg  
20  
40  
IF(AV)  
50 % duty cycle at TC = 135 °C, rectangular waveform  
per device  
A
Maximum peak one cycle non-repetitive  
surge current per leg  
See fig. 7  
Following any rated load  
condition and with rated  
VRRM applied  
5 µs sine or 3 µs rect. pulse  
10 ms sine or 6 ms rect. pulse  
850  
IFSM  
275  
7.5  
Non-repetitive avalanche energy per leg  
Repetitive avalanche current per leg  
EAS  
IAR  
TJ = 25 °C, IAS = 0.5 A, L = 60 mH  
mJ  
A
Current decaying linearly to zero in 1 µs  
Frequency limited by TJ maximum VA = 1.5 x VR typical  
0.5  
Document Number: 93348  
Revision: 21-Aug-08  
For technical questions, contact: diodes-tech@vishay.com  
www.vishay.com  
1

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