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3PMT78CA PDF预览

3PMT78CA

更新时间: 2023-06-15 00:00:00
品牌 Logo 应用领域
美高森美 - MICROSEMI /
页数 文件大小 规格书
4页 217K
描述
Trans Voltage Suppressor Diode, 1500W, 78V V(RWM), Bidirectional, 1 Element, Silicon, DO-201, PLASTIC, POWERMITE-2

3PMT78CA 数据手册

 浏览型号3PMT78CA的Datasheet PDF文件第2页浏览型号3PMT78CA的Datasheet PDF文件第3页浏览型号3PMT78CA的Datasheet PDF文件第4页 
3PMT5.0A thru 3PMT170A  
POWERMITE®  
Low Profile 1500 Watt  
S C O T T S D A L E D I V I S I O N  
Transient Voltage Suppressor  
DESCRIPTION  
APPEARANCE  
These 1500 watt transient voltage suppressors offer power-handling capabilities  
only found in larger packages. They are most often used for protecting against  
transients from inductive switching environments or induced secondary lightning  
effects as found in lower surge levels of IEC61000-4-5. With very fast response  
times, they are also effective in protection from ESD or EFT. Powermite® package  
features include a full-metallic bottom that eliminates the possibility of solder-flux  
entrapment during assembly. They also provide unique locking tabs acting as an  
integral heat sink. With its very short terminations, parasitic inductance is minimized  
to reduce voltage overshoots during fast-rise-time transients.  
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com  
FEATURES  
APPLICATIONS / BENEFITS  
Very low profile surface mount package (1.1mm)  
Secondary lightning transient protection  
Integral heat-sink-locking tabs  
Inductive switching transient protection  
Small footprint  
Compatible with automatic insertion equipment  
Full-metallic bottom eliminates flux entrapment  
Voltage range 5 volts to 170 volts  
Very low parasitic inductance for minimal  
voltage overshoot  
Compliant to IEC61000-4-2 and IEC61000-4-4 for  
ESD and EFT protection respectively and  
IEC61000-4-5 for surge levels defined herein  
Available in both unidirectional or bidirectional  
(CA suffix for bidirectional)  
MAXIMUM RATINGS  
MECHANICAL AND PACKAGING  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
1500 Watt peak pulse power (10 / 1000 µs)  
Forward Surge Current: 200 Amps at 8.3 ms  
(excluding bidirectional)  
Terminals: All terminals are tin-lead plated  
Polarity: Two-leads on side are internally connected  
together for anode and backside is cathode  
(unidirectional devices only)  
Marking: Body marked with P/N without 3PMT  
prefix  
Repetition surge rate (duty factor): 0.01%  
Thermal resistance: 2.5°C / watt junction to tab  
130°C / watt junction to ambient with  
recommended footprint  
(ie. 5.0A, 5.0CA, 12A, 12CA, 170A, 170CA, etc.)  
Molded epoxy package meets UL94V-0  
Weight: 0.072 grams (approximate)  
Tape & Reel packaging per EIA-481-2  
(16 mm - 6000 units/reel)  
Lead and mounting temperature: 260°C for 10 s  
ELECTRICAL CHARACTERISTICS  
BREAKDOWN  
CLAMPING  
VOLTAGE  
VC  
PEAK PULSE  
CURRENT  
IPP  
STANDBY  
CURRENT  
ID  
TEMPERATURE  
COEFFICIENT  
OF VBR  
STANDOFF  
VOLTAGE  
VOLTAGE  
VBR  
MICROSEMI  
VWM  
@1 mA  
@ IPP  
@ VWM  
PART NUMBER  
(FIGURE 4)  
VOLTS  
MAX  
(FIGURE 4)  
AMPS  
αV(BR)  
%/°C  
MAX  
VOLTS  
VOLTS  
MIN  
µA  
MAX  
3PMT5.0A  
3PMT6.0A  
3PMT6.5A  
3PMT7.0A  
3PMT7.5A  
3PMT8.0A  
3PMT8.5A  
3PMT9.0A  
3PMT10A  
3PMT11A  
3PMT12A  
5
6
6.5  
7
7.5  
8
8.5  
9.0  
10  
11  
12  
6.40  
6.67  
7.22  
7.78  
8.33  
8.89  
9.94  
10.0  
11.1  
12.2  
13.3  
9.2  
163.0  
145.6  
133.9  
125.0  
116.3  
110.3  
104.2  
97.4  
1000  
1000  
500  
200  
100  
50  
25  
10  
5
5
.057  
.059  
.061  
.065  
.067  
.070  
.073  
.076  
.078  
.081  
.082  
10.3  
11.2  
12.0  
12.9  
13.6  
14.4  
15.4  
17.0  
18.2  
19.9  
88.2  
82.4  
75.3  
5
Copyright 2003  
Microsemi  
Page 1  
10-6-2003 REV B  
Scottsdale Division  
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503  

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