Datasheet > 3EZ39D5RR1

3EZ39D5RR1

更新时间： 2023-02-26 13:37:06

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
7页	130K
描述
DIODE 39 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-41, PLASTIC, CASE 59-10, 2 PIN, Voltage Regulator Diode

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3EZ39D5RR1 数据手册

3EZ4.3D5 Series

APPLICATION NOTE

Since the actual voltage available from a given zener

diode is temperature dependent, it is necessary to determine

junction temperature under any set of operating conditions

in order to calculate its value. The following procedure is

recommended:

DT is the increase in junction temperature above the lead

temperature and may be found from Figure 2 for a train of

power pulses (L = 3/8 inch) or from Figure 10 for dc power.

DT_JL= q_JLP_D

For worst-case design, using expected limits of I , limits

Lead Temperature, T , should be determined from:

of P and the extremes of T (DT ) may be estimated.

T_L= q_LAP_D+ T_A

Changes in voltage, V , can then be found from:

is the lead-to-ambient thermal resistance (°C/W) and

DV = q_VZDT_J

P is the power dissipation. The value for q will vary and

depends on the device mounting method. q is generally

30−40°C/W for the various clips and tie points in common

use and for printed circuit board wiring.

The temperature of the lead can also be measured using a

thermocouple placed on the lead as close as possible to the

tie point. The thermal mass connected to the tie point is

normally large enough so that it will not significantly

respond to heat surges generated in the diode as a result of

pulsed operation once steady-state conditions are achieved.

, the zener voltage temperature coefficient, is found

from Figures 5 and 6.

Under high power-pulse operation, the zener voltage will

vary with time and may also be affected significantly by the

zener resistance. For best regulation, keep current

excursions as low as possible.

Data of Figure 2 should not be used to compute surge

capability. Surge limitations are given in Figure 3. They are

lower than would be expected by considering only junction

temperature, as current crowding effects cause temperatures

to be extremely high in small spots resulting in device

degradation should the limits of Figure 3 be exceeded.

Using the measured value of T , the junction temperature

may be determined by:

T_J= T_L+ DT_JL

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