Datasheet > 3DD13007_15

3DD13007_15

更新时间： 2022-02-26 11:17:02

品牌	Logo	应用领域
SECOS		/
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2页	151K
描述
NPN Plastic-Encapsulated Transistor

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3DD13007_15 数据手册

3DD13007

8A , 700V

NPN Plastic-Encapsulated Transistor

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

TO-220J

FEATURES

ꢀ

Power switching applications

CLASSIFICATION OF t_S

Product-Rank

3DD13007-A

3DD13007-B

3DD13007-C

Range

3-4(µs)

4-5(µs)

5-6(µs)

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

V_CBO

V_CEO

V_EBO

I_C

700

400

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

P_C

°C

T_J, T_STG

150, -55~150

ELECTRICAL CHARACTERISTICS (T_A=25°C unless otherwise specified)

Parameter

Symbol Min.

Typ. Max.

Unit

Test Condition

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut – Off Current

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

700

I_C=1mA, I_E=0

400

I_C=10mA, I_B=0

I_E=1mA, I_C=0

V_CB=700V, I_E=0

V_CE=400V, I_B=0

V_EB=9V, I_C=0

V_CE=5V, I_C=2A

V_CE=5V, I_C=8A

I_C=2A, I_B=0.4A

I_C=5A, I_B=1A

I_C=8A, I_B=2A

I_C=2A, I_B=0.4A

I_C=5A, I_B=1A

100

µA

Collector Cut – Off Current

I_CEO

Emitter Cut – Off Current

I_EBO

DC Current Gain

h_FE

Collector to Emitter Saturation Voltage

V_CE(sat)

1.2

1.6

Base to Emitter Saturation Voltage

V_BE(sat)

Transition Frequency

Fall time

f_T

t_F

t_S

0.5

MHz V_CE=10V, I_C=0.5A, f =1MHz

µs

I_C=500mA, (UI9600)

Storage time

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

27-Jun-2014 Rev. A

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3DD13007-A	SECOS	8A , 700V NPN Plastic-Encapsulated Transistor	获取价格
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3DD13007B8	CRMICRO	TO-220	获取价格
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