Datasheet > 3DD13007N36A

3DD13007N36A

更新时间： 2024-09-24 09:46:59

品牌	Logo	应用领域
江苏长电/长晶 - CJ		/
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1页	277K
描述
Transistor

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技术参数
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3DD13007N36A 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.61
Base Number Matches：	1

3DD13007N36A 数据手册

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

TO-220 Plastic-Encapsulate Transistors

3DD13007N36 TRANSISTOR (NPN)

TO-220

FEATURES

Power switching applications

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (T^a=25℃ unless otherwise noted)

1 2 3

Symbol

V_CBO

V_CEO

V_EBO

I_C

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Value

700

Unit

400

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

P_C

T_j

150

℃

T_stg

Storage Temperature

-55~150

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

Test conditions

I_C= 1mA,I_E=0

Min

700

400

Typ

Max

Unit

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

I_C=10mA,I_B=0

I_E=1mA,I_C=0

V_CB=700V,I_E=0

V_CE=400V,I_B=0

V_EB=9V,I_C=0

100

μA

Collector cut-off current

I_CEO

Emitter cut-off current

I_EBO

h_FE(1)

V_CE=5V, I_C=2A

V_CE=5V, I_C=8A

I_C=2A,I_B=0.4A

DC current gain

h_FE(2)

V_CE(sat)1

V_CE(sat)2

V_CE(sat)3

V_BE(sat)1

V_BE(sat)2

t_S

Collector-emitter saturation voltage

Base-emitter saturation voltage

I_C=5A,I_B=1A

I_C=8A,I_B=2A

I_C=2A,I_B=0.4A

1.2

1.6

I_C=5A,I_B=1A

Storage time

I_C=500mA (UI9600)

V_CE=10V, I_C=0.5A,f=1MHz

μs

MHz

Fall time

0.5

t_f

f_T

Transition frequency

CLASSIFICATION OF h_FE(1)

Range

10-15

15-20

20-25

25-30

30-35

35-40

CLASSIFICATION OF t_S

Rank

Range

3-4(μs )

4-5(μs )

5-6 (μs )

A,Jun,2011

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