Datasheet > 31DQ09GTR-M3

31DQ09GTR-M3

更新时间： 2022-09-18 15:14:53

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	115K
描述
Schottky Rectifier, 3.3 A

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数据手册

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31DQ09GTR-M3 数据手册

VS-31DQ09G, VS-31DQ09G-M3, VS-31DQ10G, VS-31DQ10G-M3

www.vishay.com

Vishay Semiconductors

150

120

T_J= 150 °C

T_J= 125 °C

T_J

25 °C

Square wave (D = 0.50)

80 % Rated V_Rapplied

see note (1)

0.1

0.3

0.6

0.9

1.2

V_FM- Forward Voltage Drop (V)

93322_01

I_F(AV)- Average Forward Current (A)

93322_04

Fig. 4 - Maximum Allowable Lead Temperature vs.

Average Forward Current

Fig. 1 - Maximum Forward Voltage Drop Characteristics

D = 0.20

D = 0.25

D = 0.33

D = 0.50

D = 0.75

T_J= 150 °C

T_J= 125 °C

0.1

RMS Limit

0.01

0.001

0.0001

T_J= 25 °C

100

Average Forward Current - I_F(AV)(A)

Fig. 5 - Forward Power Loss Characteristics

93322_05

93322_02

V_R- Reverse Voltage (V)

Fig. 2 - Typical Values of Reverse Current vs.

Reverse Voltage

1000

100

T_J= 25 °C

100

At Any Rated Load Condition

And With rated V_RRMApplied

Following Surge

100

1000

10 000

120

160

93322_06

t_p- Square Wave Pulse Duration (µs)

93322_03

V_R- Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage

Fig. 6 - Maximum Non-Repetitive Surge Current

Note

(1)

Formula used: T_C= T_J- (Pd + Pd_REV) x R_thJC

;

Pd = Forward power loss = I_F(AV)x V_FMat (I_F(AV)/D) (see fig. 6); Pd_REV= Inverse power loss = V_R1x I_R(1 - D); I_Rat V_R1= 80 % rated V_R

Revision: 19-Sep-11

Document Number: 93322

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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