Datasheet > 31DQ09-M3

31DQ09-M3

更新时间： 2022-09-18 15:15:23

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
6页	120K
描述
Schottky Rectifier, 3.3 A

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31DQ09-M3 数据手册

VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3

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Vishay Semiconductors

ELECTRICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

0.85

0.97

0.69

0.80

UNITS

3 A

T_J= 25 °C

6 A

Maximum forward voltage drop

See fig. 1

(1)

V_FM

3 A

T_J= 125 °C

6 A

T_J= 25 °C

T_J= 125 °C

Maximum reverse leakage current

See fig. 4

(1)

I_RM

_R= Rated V_R

Typical junction capacitance

Typical series inductance

C_T

L_S

V_R= 5 V_DC(test signal range 100 kHz to 1 MHz) 25 °C

Measured lead to lead 5 mm from package body

Rated V_R

110

9.0

Maximum voltage rate of charge

dV/dt

10 000

V/µs

Note

(1)

Pulse width < 300 μs, duty cycle < 2 %

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum junction and storage

temperature range

T_J⁽¹⁾, T_Stg

- 40 to 150

°C

Maximum thermal resistance,

junction to ambient

DC operation

Without cooling fin

R_thJA

R_thJL

°C/W

Typical thermal resistance,

junction to lead

DC operation

1.2

Approximate weight

Marking device

0.042

oz.

31DQ09

31DQ10

Case style C-16

Note

dP_tot

(1)

------------- < -------------- thermal runaway condition for a diode on its own heatsink

dT_JR_thJA

Revision: 19-Sep-11

Document Number: 93321

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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