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30S10-AP PDF预览

30S10-AP

更新时间: 2024-01-21 03:16:05
品牌 Logo 应用领域
美微科 - MCC 二极管
页数 文件大小 规格书
4页 130K
描述
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, T-18, 2 PIN

30S10-AP 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:ROHS COMPLIANT, PLASTIC, T-18, 2 PIN针数:2
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
应用:MEDIUM POWER外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:O-PALF-W2
JESD-609代码:e3湿度敏感等级:1
最大非重复峰值正向电流:80 A元件数量:1
相数:1端子数量:2
最大输出电流:3 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:LONG FORM
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
最大重复峰值反向电压:1000 V表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:WIRE
端子位置:AXIAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

30S10-AP 数据手册

 浏览型号30S10-AP的Datasheet PDF文件第1页浏览型号30S10-AP的Datasheet PDF文件第3页浏览型号30S10-AP的Datasheet PDF文件第4页 
M C C  
Micro Commercial Components  
30S1  
thru  
30S10  
TM  
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20736 Marilla Street Chatsworth  
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
Features  
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates  
3 Amp  
RoHS Compliant. See ordering information)  
Medium Power  
Silicon Rectifier  
50 - 1000 Volts  
Peak Reverse Voltages Through 1000 Volts  
Glass Passivated Chip and High Surge Current Capability  
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Maximum Ratings  
Operating Temperature: -55°C to +150°C  
Storage Temperature: -55°C to +150°C  
T-18  
MCC  
Catalog  
Number  
Device  
Marking  
Maximum  
Reccurrent  
Peak  
Reverse  
Voltage  
100V  
Maximum Maximum  
DC  
RMS  
Voltage  
Blocking  
Voltage  
D
30S1  
30S2  
70V  
140V  
100V  
200V  
30S1  
30S2  
200V  
30S3  
30S4  
30S5  
30S6  
30S8  
300V  
400V  
500V  
600V  
800V  
210V  
280V  
350V  
420V  
560V  
300V  
400V  
500V  
600V  
800V  
30S3  
30S4  
30S5  
30S6  
30S8  
A
Cathode  
30S10  
1000V  
700V  
1000V  
30S10  
B
D
Electrical Characteristics @ 25°C Unless Otherwise Specified  
3.0A  
Average Forward  
Current  
IF(AV)  
TA = 100°C  
Peak Forward Surge  
Current  
Maximum  
IFSM  
80A  
8.3ms, half sine  
C
Instantaneous  
Forward Voltage  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
VF  
1.0V  
IFM = 3.0A;  
TJ = 25°C(Note 2)  
IR  
A  
10µA  
TJ = 25°C  
TJ = 100°C  
DIMENSIONS  
INCHES  
MIN  
MM  
MIN  
DIM  
A
MAX  
.350  
.145  
.042  
---  
MAX  
8.89  
3.68  
1.06  
---  
NOTE  
Typical Junction  
Capacitance  
CJ  
100pF  
Measured at  
1.0MHz, VR=4.0V  
.330  
8.39  
3.31  
B
.130  
C
.038  
0.97  
D
1.00  
25.40  
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.  
2.Pulse test: Pulse width 300 µsec, Duty cycle 1%  
www.mccsemi.com  
1 of 3  
Revision: 4  
2008/01/01  

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