Datasheet > 30PT08BI

30PT08BI

更新时间： 2024-02-14 17:12:22

品牌	Logo	应用领域
尼尔 - NELLSEMI		可控硅
页数	文件大小	规格书
6页	900K
描述
Stansard SCRs, 30A

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数据手册

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30PT08BI 数据手册

RoHS

30PT Series _RoHS

SEMICONDUCTOR

Fig.3 RMS on-state current versus case

temperature.

Fig.4 Relative variation of thermal impedance

versus pulse duration.

K=[Z_th(j-c)/R_th(j-c)

]

I_T(RMS)(A)

1.00

0.10

0.01

0.0

TO-3P

TO-247AB

th(j-c)

TO-220AB

TO-263

th(j-a)

TO-220AB insulated

TO-3P insulated

t_P(s)

T_case(°C)

100

125

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

Fig.5 Relative variation of gate trigger

current versus junction temperature.

Fig.6 Surge peak on-state current versus

number of cycles.

I_TSM(A)

l_GT,l_H,l_L[T_j] / l_GT,l_H,l_L[T_j=25°C]

500

2.5

2.0

= 10ms

400

300

200

100

One cycle

l_GT

1.5

1.0

0.5

0.0

T_jinitial = 25°C

l_H&l_L

T_j(°C)

Number of cycles

-40 -30 -20 -10

10 20 30 40 50 60 70 80 90 100 110 120 130

100

1000

Fig.8 On-state characteristics

(maximum values)

Fig.7 Non-repetitive surge peak on-state

current and corresponding value of

l²t versus sinusoidal pulse width

I_TSM(A), l²t (A²s)

I_TM(A)

2000

1000

100

pulse with t < 10 ms, and corresponding values of l

T_j= max

I_TSM

T_jinitial = 25°C

l²t

T_j= 25°C

T_j= max.:

V_to=1.27V

R_d= 12mΩ

V_TM(V)

T_p(ms)

200

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