Datasheet > 30N20

30N20

更新时间： 2022-04-06 14:51:00

品牌	Logo	应用领域
友顺 - UTC		/
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描述
30A, 200V N-CHANNEL POWER MOSFET

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30N20 数据手册

30N20

Preliminary

Power MOSFET

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_DSS

V_GSS

I_D

RATINGS

200

UNIT

Drain-Source Voltage

Gate-Source Voltage

±30

Continuous

Pulsed

Drain Current

I_DM

124

Avalanche Current

Avalanche Energy

I_AR

Single Pulsed

Repetitive

E_AS

E_AR

P_D

640

Power Dissipation

Junction Temperature

Storage Temperature Range

T_J

+150

-55 ~ +150

°C

T_STG

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

ELECTRICAL CHARACTERISTICS

PARAMETER

SYMBOL

TEST CONDITIONS

I_D=250µA, V_GS=0V

MIN TYP MAX UNIT

OFF CHARACTERISTICS

Drain-Source Breakdown Voltage

Drain-Source Leakage Current

BV_DSS

I_DSS

200

V_DS=200V

μA

Forward

Reverse

V_GS=+30V, V_DS=0V

V_GS=-30V, V_DS=0V

+100 nA

-100 nA

Gate-Source Leakage Current

I_GSS

ON CHARACTERISTICS

Gate Threshold Voltage

V_GS(TH)

R_DS(ON)

I_D=250µA

Static Drain-Source On-State Resistance

DYNAMIC PARAMETERS

Input Capacitance

V_GS=10V, I_D=15A

75 mꢀ

C_ISS

C_OSS

C_RSS

2400 3100 pF

430 560 pF

V_GS=0V, V_DS=25V, f=1MHz

Output Capacitance

Reverse Transfer Capacitance

SWITCHING PARAMETERS

Total Gate Charge

Q_G

Q_GS

Q_GD

t_D(ON)

t_R

78 nC

V_DD=50V, V_GS=10V , I_D=1.3A

Gate to Source Charge

Gate to Drain Charge

Turn-ON Delay Time

Rise Time

V_DD=30V, I_D=0.5A, R_G=25ꢀ,

_GS=0~10V

280

125

115

Turn-OFF Delay Time

Fall-Time

t_D(OFF)

t_F

SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS

Maximum Body-Diode Continuous Current

Maximum Body-Diode Pulsed Current

Drain-Source Diode Forward Voltage

I_S

124

1.5

I_SM

V_SD

I_S=30A, V_GS=0V

UNISONIC TECHNOLOGIES CO., LTD

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www.unisonic.com.tw

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