Datasheet > 30-FT07NIC320S501-PJ76F58

30-FT07NIC320S501-PJ76F58

更新时间： 2024-04-09 19:01:41

品牌	Logo	应用领域
VINCOTECH		双极性晶体管
页数	文件大小	规格书
29页	9184K
描述
IGBT S5 High speed and smooth switching Low gate charge Very low collector emitter saturation voltage

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30-FT07NIC320S501-PJ76F58

datasheet

Characteristic Values

Symbol

Parameter

Conditions

Values

Typ

Unit

V_CE[V] I_C[A]

V_DS[V] I_D[A] T_j[°C]

V_GE[V]

V_GS[V]

Min

Max

V_F[V]

I_F[A]

Buck Switch

Static

V_GE(th)

Gate-emitter threshold voltage

V_CE= V_GE

0,0032

320

3,2

4,8

1,43

1,57

1,6

1,75⁽¹⁾

V_CEsat

Collector-emitter saturation voltage

125

150

I_CES

I_GES

r_g

Collector-emitter cut-off current

Gate-emitter leakage current

Internal gate resistance

Input capacitance

650

400

800

µA

None

20000

C_ies

C_res

f = 1 Mhz

Reverse transfer capacitance

Thermal

λ_paste= 3,4 W/mK

(PSX)

Thermal resistance junction to sink⁽²⁾

Dynamic

0,21

K/W

R_th(j-s)

79,3

80,7

t_d(on)

Turn-on delay time

Rise time

125

150

81,4

16,42

17,79

18,12

87,43

104,41

108,52

13,44

27,73

31,76

3,48

t_r

125

150

R_gon= 2 Ω

R_goff= 2 Ω

t_d(off)

Turn-off delay time

Fall time

125

150

±15

350

300

t_f

125

150

Q_rFWD=7,07 µC

Q_rFWD=14,99 µC

Q_rFWD=17,5 µC

E_on

Turn-on energy (per pulse)

Turn-off energy (per pulse)

125

150

4,73

mWs

4,95

3,11

E_off

125

150

4,8

5,25

24 Nov. 2023 / Revision 1

1 2 345 6 7...29

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