Datasheet > 晶体管 > 射频场效应晶体管> 2SK3391JXTL-E

2SK3391JXTL-E

更新时间： 2024-02-14 13:05:14

品牌	Logo	应用领域
瑞萨 - RENESAS		放大器功率放大器
页数	文件大小	规格书
10页	150K
描述
Silicon N-Channel MOS FET UHF Power Amplifier

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

2SK3391JXTL-E 数据手册

2SK3391

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

I_DSS

I_GSS

Min.

—

Typ

—

Max.

Unit

µA

Test Conditions

V_DS= 13.7 V, V_GS= 0

Zero gate voltage drain current

Gate to source leak current

Gate to source cutoff voltage

Input capacitance

—

±5

V_GS= ±10 V, V_DS= 0

V_GS(off)

Ciss

2.3

—

3.1

—

V_DS= 13.7 V, I_D= 1 mA

3.5

—

V_GS= 5 V, V_DS= 0, f = 1 MHz

Output capacitance

Coss

Pout

ηadd

—

V_DS= 13.7 V, V_GS= 0, f = 1 MHz

Output Power

1.6

—

V_DS= 13.7 V, I_DQ= 150 mA

f = 836 MHz, Pin = 25.1 mW

Added Efficiency

—

Main Characteristics

Maximum Channel Power

Dissipation Curve

Typical Output Characteristics

7 V

1.5

10 V

8 V

6 V

5 V

0.5

V_GS= 4 V

Pulse Test

8 10

100

150

200

Case Temperature Tc (°C)

Drain to Source Voltage V_DS(V)

Forward Transfer Admittance vs.

Drain Current

Typical Transfer Characteristics

0.8

0.6

0.4

0.2

0.0

Tc = - 25°C

Tc = 75°C

25°C

0.3

0.1

- 25°C

25°C

0.03

0.01

75°C

V_DS= 13.7 V

Pulse Test

V_DS= 13.7 V

Pulse Test

0.003

0.001

0.001 0.003 0.01 0.03 0.1 0.3

Gate to Source Voltage V_GS(V)

Drain Current I_D(A)

REJ03G0209-0300 Rev.3.00 Nov 08, 2007

Page 2 of 9

123 4 5 6 7...10

下载PDF

与2SK3391JXTL-E相关器件

型号	品牌	描述	获取价格	数据表
2SK3396	PANASONIC	Silicon N-Channel Junction FET	获取价格
2SK3397	TOSHIBA	TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS)	获取价格
2SK3397_06	TOSHIBA	Silicon N Channel MOS Type Relay Drive and DC-DC Converter Applications Motor Drive Applic	获取价格
2SK3397_09	TOSHIBA	Relay Drive and DC-DC Converter Applications	获取价格
2SK3398	TOSHIBA	Switching Regulator and DC-DC Converter Applications and Motor Drive Applications	获取价格
2SK3398_06	TOSHIBA	Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications Motor Driv	获取价格