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2SK2090-A

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品牌	Logo	应用领域
日电电子 - NEC		晶体开关小信号场效应晶体管光电二极管输入元件
页数	文件大小	规格书
6页	61K
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2SK2090-A 数据手册

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2090

N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING

The2SK2090isanN-channelverticalMOSFET. Because

it can be driven by a voltage as low as 2.5 V and it is not

necessary to consider a drive current, this FET is ideal as an

actuatorfor low-currentportablesystemssuchasheadphone

stereos and video cameras.

PACKAGE DIMENSIONS (in mm)

2.1 ±0.1

1.25 ±0.1

FEATURES

•

Gate can be driven by 2.5 V

Because of its high input impedance, there’s no need to

consider drive current

Marking

Marking: G22

EQUIVALENT CURCUIT

Drain (D)

Internal

diode

Gate (G)

Gate

protection

diode

CONNECTIONS

S: Source

D: Drain

G: Gate

Source (S)

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER

Drain to Source Voltage

Gate to Source Voltage

Drain Current (DC)

SYMBOL

VDSS

VGSS

ID(DC)

ID(pulse)

TEST CONDITIONS

RATING

UNIT

VGS = 0

VDS = 0

±7.0

±100

˚C

Drain Current (Pulse)

Total Power Dissipation

Channel Temperature

Storage Temperature

PW ≤ 10 ms, duty cycle ≤ 50 %

±200

150

Tch

150

Tstg

–55 to +150

˚C

Document No. D11228EJ1V0DS00 (1st edition)

Date Published June 1996 P

Printed in Japan

1996

12 3 4 5 6

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