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2SK0065P PDF预览

2SK0065P

更新时间: 2024-02-12 05:36:56
品牌 Logo 应用领域
其他 - ETC 晶体晶体管放大器
页数 文件大小 规格书
3页 76K
描述
TRANSISTOR | JFET | N-CHANNEL | 12V V(BR)DSS | 40UA I(DSS) | SPAKVAR

2SK0065P 技术参数

生命周期:Obsolete包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8541.21.00.95
风险等级:5.84Is Samacsys:N
配置:SINGLE最大漏极电流 (ID):0.002 A
FET 技术:JUNCTIONJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:DEPLETION MODE最高工作温度:70 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):0.02 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

2SK0065P 数据手册

 浏览型号2SK0065P的Datasheet PDF文件第2页浏览型号2SK0065P的Datasheet PDF文件第3页 
Silicon Junction FETs (Small Signal)  
2SK0065 (2SK65)  
Silicon N-Channel Junction FET  
For impedance conversion in low frequency  
For electret capacitor microphone  
unit: mm  
2.0±0.2  
4.5±0.1  
1.0  
Features  
Diode is connected between gate and source  
Low noise voltage  
Absolute Maximum Ratings (Ta = 25°C)  
Parameter  
Drain to Source voltage  
Gate to Drain voltage  
Drain to Source current  
Drain to Gate current  
Gate to Source current  
Allowable power dissipation  
Symbol  
VDSO  
VGDO  
IDSO  
Ratings  
Unit  
V
0.45±0.05  
12  
12  
V
2.54  
2
0.8±0.1  
2
mA  
mA  
mA  
mW  
°C  
1
3
1: Drain  
2: Gate  
3: Source  
IDGO  
IGSO  
2
2
S Type Package  
PD  
20  
Operating ambient temperature Topr  
Storage temperature Tstg  
10 to +70  
20 to +150  
°C  
Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
Conditions  
min  
typ  
max  
Unit  
*
Drain to Source cut-off current  
IDSS  
VDS = 4.5V, VGS = 0, RS = 2.2k± 1%  
VDS = 4.5V, VGS = 0  
0.04  
0.8  
mA  
Mutual conductance  
Noise figure  
gm  
300  
500  
µS  
µV  
dB  
dB  
dB  
RS = 2.2k± 1%, f = 1kHz  
VDS = 4.5V, RS = 2.2k± 1%  
CG = 10pF, A-curve  
NV  
4
VDS = 4.5V, RS = 2.2k± 1%  
CG = 10pF, eG = 100mV, f = 70Hz  
VDS = 12V, RS = 2.2k± 1%  
CG = 10pF, eG = 100mV, f = 70Hz  
VDS = 1V, RS = 2.2k± 1%  
CG = 10pF, eG = 100mV, f = 70Hz  
*
GV1  
10  
9.5  
11  
*
Voltage gain  
GV2  
*
GV3  
* IDSS rank classification and GV value  
Runk  
IDSS (mA)  
P
0.04 to 0.2  
> 13  
> 12  
< 3  
Q
0.15 to 0.8  
> 12  
> 11  
< 3  
GV1 (dB)  
GV2 (dB)  
| GV1 GV2 | (dB)  
Note) The part number in the parenthesis shows conventional part number.  
241  

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