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2SK0301S PDF预览

2SK0301S

更新时间: 2024-11-25 13:04:27
品牌 Logo 应用领域
松下 - PANASONIC /
页数 文件大小 规格书
3页 76K
描述
Small Signal Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Silicon, Junction FET, TO-92, SC-43, 3 PIN

2SK0301S 技术参数

生命周期:Obsolete零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:5.84
配置:SINGLE最大漏极电流 (ID):0.03 A
FET 技术:JUNCTIONJEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:125 °C封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:CYLINDRICAL
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):0.25 W
认证状态:Not Qualified子类别:Other Transistors
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:BOTTOM晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

2SK0301S 数据手册

 浏览型号2SK0301S的Datasheet PDF文件第2页浏览型号2SK0301S的Datasheet PDF文件第3页 
Silicon Junction FETs (Small Signal)  
2SK0301 (2SK301)  
Silicon N-Channel Junction FET  
For low-frequency amplification  
For switching  
unit: mm  
5.0±0.2  
4.0±0.2  
Features  
Low noies, high gain  
High gate to drain voltage VGDO  
0.45+00..12  
0.45+00..12  
1.27  
1.27  
Absolute Maximum Ratings (Ta = 25°C)  
Parameter  
Drain to Source voltage  
Gate to Drain voltage  
Gate to Source voltage  
Drain current  
Symbol  
VDSX  
VGDO  
VGSO  
ID  
Ratings  
55  
Unit  
V
1
2 3  
1: Drain  
2: Gate  
3: Source  
2.54±0.15  
55  
V
55  
V
JEDEC: TO-92  
EIAJ: SC-43  
TO-92 Type Package  
±30  
mA  
mA  
mW  
°C  
Gate current  
IG  
10  
Allowable power dissipation  
Junction temperature  
Storage temperature  
PD  
250  
Tj  
125  
Tstg  
55 to +125  
°C  
Electrical Characteristics (Ta = 25°C)  
Parameter  
Symbol  
Conditions  
min  
typ  
max  
20  
Unit  
mA  
nA  
V
*
Drain to Source cut-off current  
Gate to Source leakage current  
Gate to Drain voltage  
IDSS  
VDS = 10V, VGS = 0  
VGS = 30V, VDS = 0  
G = 100µA, VDS = 0  
1
IGSS  
VGDC  
VGSC  
gm  
10  
I
55  
80  
Gate to Source cut-off voltage  
Mutual conductance  
VDS = 10V, ID = 10µA  
5  
V
VDS = 10V, VGS = 0, f = 1kHz  
2.5  
7.5  
6.5  
1.9  
mS  
pF  
Input capacitance (Common Source) Ciss  
VDS = 10V, VGS = 0, f = 1MHz  
Reverse transfer capacitance (Common Source) Crss  
pF  
VDS = 10V, VGS = 0, Rg = 100kΩ  
Noise figure  
NF  
0.5  
dB  
f = 100Hz  
* IDSS rank classification  
Runk  
P
Q
R
S
IDSS (mA)  
1 to 3  
2 to 6.5  
5 to 12  
10 to 20  
Note) The part number in the parenthesis shows conventional part number.  
247  

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