2SJ553S

更新时间： 2024-01-18 23:49:32

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体晶体管功率场效应晶体管开关脉冲
页数	文件大小	规格书
9页	96K
描述
Silicon P Channel MOS FET

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技术参数
数据手册

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2SJ553S 技术参数

是否Rohs认证：	符合	生命周期：	Not Recommended
零件包装代码：	LDPAK(S)-(1)	包装说明：	,
针数：	4	Reach Compliance Code：	compliant
风险等级：	5.64	Is Samacsys：	N
峰值回流温度（摄氏度）：	NOT SPECIFIED	处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

2SJ553S 数据手册

2SJ553(L), 2SJ553(S)

Main Characteristics

Power vs. Temperature Derating

Maximum Safe Operation Area

–1000

–300

–100

10 µs

PW = 10 ms (1 shot)

–30

–10

–3

–1

Operation in

this area is

limited by R_{DS (on)}

–0.3

–0.1

Ta = 25°C

100

150

200

–0.1 –0.3

–1

–3

–10 –30 –100

Case Temperature Tc (°C)

Drain to Source Voltage V_DS(V)

Typical Output Characteristics

Typical Transfer Characteristics

–50

–40

–30

–20

–10

–50

–40

–30

–20

–10

–10 V

–8 V

Pulse Test

–3.5 V

V_DS= –10 V

Pulse Test

–5 V

–4 V

–3 V

–2.5 V

25°C

Tc = 75°C

V_GS= –2 V

–25°C

–2

–4

–6

–8

–10

–1

–2

–3

–4

–5

Drain to Source Voltage V_DS(V)

Gate to Source Voltage V_GS(V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

Static Drain to Source on State Resistance

vs. Drain Current

–5

Pulse Test

0.5

–4

–3

–2

–1

0.2

0.1

V_GS= –4 V

0.05

I_D= –50 A

0.02

0.01

–10 V

–20 A

–10 A

–4

–8

–12

–16

–20

–1

–3

–10 –30 –100 –300 –1000

Drain Current I_D(A)

Gate to Source Voltage V_GS(V)

Rev.4.00 Sep 07, 2005 page 3 of 8

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